The present disclosure relates to a manufacturing method for an electron emitting device using a graphite adhesive material. A method of preparing paste for forming a cathode of an electron emitting device includes: mixing and dispersing a nanomaterial for electron emission and a graphite filler in a solvent; drying a mixed solution in which the nanomaterial and the graphite filler are mixed; and preparing paste by mixing a graphite binder with the dried mixture.

The present disclosure relates to a manufacturing method for an electron emitting device using a graphite adhesive material. A method of preparing paste for forming a cathode of an electron emitting device includes: mixing and dispersing a nanomaterial for electron emission and a graphite filler in a solvent; drying a mixed solution in which the nanomaterial and the graphite filler are mixed; and preparing paste by mixing a graphite binder with the dried mixture.

Systems and methods for providing a heaterless hollow cathode for use in electric propulsion devices is presented. According to one aspect the cathode includes a thermionic emitter having a constricted upstream inlet compared to a downstream outlet of the emitter. The emitter is arranged downstream a hollow cathode tube. Constriction of the upstream inlet is provided by an inner cylindrical hollow space at an upstream region of the emitter having a diameter that is smaller compared to a diameter of an inner cylindrical hollow space at a downstream region of the emitter. A hollow transition region having a varying diameter connects the upstream region to the downstream region. According to another aspect, a ratio of the diameters of the two cylindrical hollow spaces reduces penetration of electric field, and therefore of electric discharge, into the upstream region of the emitter during operation.

Systems and methods for providing a heaterless hollow cathode for use in electric propulsion devices is presented. According to one aspect the cathode includes a thermionic emitter having a constricted upstream inlet compared to a downstream outlet of the emitter. The emitter is arranged downstream a hollow cathode tube. Constriction of the upstream inlet is provided by an inner cylindrical hollow space at an upstream region of the emitter having a diameter that is smaller compared to a diameter of an inner cylindrical hollow space at a downstream region of the emitter. A hollow transition region having a varying diameter connects the upstream region to the downstream region. According to another aspect, a ratio of the diameters of the two cylindrical hollow spaces reduces penetration of electric field, and therefore of electric discharge, into the upstream region of the emitter during operation.

An extreme-ultraviolet light source device comprises: a discharge chamber of which the inside is maintained in a vacuum; an electron beam-emitting unit which is located inside the discharge chamber and produces electron beams; and a metal radiator which is located inside the discharge chamber and is ionized by the electron beams. Extreme-ultraviolet radiation occurs in plasma generated from the metal radiator. The electron beam-emitting unit comprises: a cathode electrode; a plurality of emitters located on the cathode electrode and including a carbon-based material; and a gate electrode which is located on the plurality of emitters at a distance therefrom and to which a pulse voltage is applied.

An extreme-ultraviolet light source device comprises: a discharge chamber of which the inside is maintained in a vacuum; an electron beam-emitting unit which is located inside the discharge chamber and produces electron beams; and a metal radiator which is located inside the discharge chamber and is ionized by the electron beams. Extreme-ultraviolet radiation occurs in plasma generated from the metal radiator. The electron beam-emitting unit comprises: a cathode electrode; a plurality of emitters located on the cathode electrode and including a carbon-based material; and a gate electrode which is located on the plurality of emitters at a distance therefrom and to which a pulse voltage is applied.

An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

The invention relates to a device (20) for producing an electron beam (4), which comprises a hot cathode (1), a cathode electrode (2), an anode electrode (3) having an opening (6) through which an electron beam (4) produced by the device can pass, wherein during the operation of the device (20) a voltage for accelerating the electrons exiting from the hot cathode (1) is applied between the cathode electrode (2) and the anode electrode (3), and further comprising deflection means that can deflect the electron beam (4) that has passed through the opening of the anode electrode (3), wherein the deflection means comprise at least one deflection electrode (8, 12), which can reflect the electron beam (4) and/or which comprises a deflection surface (9) that is inclined towards the propagation direction of the electron beam (4).

The invention relates to a device (20) for producing an electron beam (4), which comprises a hot cathode (1), a cathode electrode (2), an anode electrode (3) having an opening (6) through which an electron beam (4) produced by the device can pass, wherein during the operation of the device (20) a voltage for accelerating the electrons exiting from the hot cathode (1) is applied between the cathode electrode (2) and the anode electrode (3), and further comprising deflection means that can deflect the electron beam (4) that has passed through the opening of the anode electrode (3), wherein the deflection means comprise at least one deflection electrode (8, 12), which can reflect the electron beam (4) and/or which comprises a deflection surface (9) that is inclined towards the propagation direction of the electron beam (4).