An image intensifier sensor for acquiring, amplifying and displaying images and including a vacuum envelope, the image intensifier sensor including a photocathode arranged for releasing photoelectrons into the vacuum envelope upon electromagnetic radiation acquired from the images which impinges the photocathode, an anode, spaced apart from and in facing relationship with the photocathode, arranged for receiving the photoelectrons and converting the photoelectrons for displaying the images on the basis thereof, and a power supply unit for providing power to the image intensifier sensor, wherein the image intensifier sensor further includes potting material, wherein the potting material comprises a foam compound.

An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

A support member is made of a material(s) that excel in both of electrical conductivity and thermal conductivity. Phosphors are applied to the surface of the support member. The phosphors include layers having a very small thickness as close as possible to a minimum quantity of phosphors that can be obtained. The phosphors are disposed on a surface of the support member in a thickness small enough to an extent that the support member is slightly glimpsed in part from between the phosphors. The support member is exposed in part out of the lighting device.

An image intensifier sensor for acquiring, amplifying and displaying images and including a vacuum envelope, the image intensifier sensor including a photocathode arranged for releasing photoelectrons into the vacuum envelope upon electromagnetic radiation acquired from the images which impinges the photocathode, an anode, spaced apart from and in facing relationship with the photocathode, arranged for receiving the photoelectrons and converting the photoelectrons for displaying the images on the basis thereof, and a power supply unit for providing power to the image intensifier sensor, wherein the image intensifier sensor further includes potting material, wherein the potting material comprises a foam compound.

An efficient source of EUV or SXR flux uses multiple e-beams from multiple cathodes to impact a wide anode target with a flux-generating surface to generate flux over a wide area. The conversion efficiency of e-beam power to flux power may be improved by the direction of the e-beams towards the anode target at shallow or grazing incidence angles or the use of mirrored anode surfaces which reflect EUV or SXR. The source is enclosed in a vacuum chamber and performs work such as the penetration of photoresist on a semiconductor wafer in vacuum.

Disclosed is a field emission apparatus. The apparatus comprises a cathode electrode and an anode electrode spaced apart from each other, an emitter on the cathode electrode, a gate electrode between the cathode and anode electrodes and including at least one gate aperture overlapping the emitter, and an electron transmissive sheet on the gate electrode and including a plurality of fine openings overlapping the gate aperture.

Disclosed is a field emission apparatus. The apparatus comprises a cathode electrode and an anode electrode spaced apart from each other, an emitter on the cathode electrode, a gate electrode between the cathode and anode electrodes and including at least one gate aperture overlapping the emitter, and an electron transmissive sheet on the gate electrode and including a plurality of fine openings overlapping the gate aperture.

An efficient source of EUV or SXR flux uses multiple e-beams from multiple cathodes to impact a wide anode target with a flux-generating surface to generate flux over a wide area. The conversion efficiency of e-beam power to flux power may be improved by the direction of the e-beams towards the anode target at shallow or grazing incidence angles or the use of mirrored anode surfaces which reflect EUV or SXR. The source is enclosed in a vacuum chamber and performs work such as the penetration of photoresist on a semiconductor wafer in vacuum.

This fluorescent display tube includes an anode and a plurality of filament-shaped cathodes both provided in an envelope, a support as one of a pair of support bodies which support the cathodes is electrically divided for each of the cathodes and at the time of driving, and a cathode driving IC gives pulse voltages to the cathodes at different timing. Since the voltages are applied to the arranged cathodes sequentially, current flowing through the cathode driving IC can be small as compared with a case where voltages are simultaneously applied to a plurality of cathodes. Heat generation of the cathode driving IC is suppressed, and costs required for the cathode driving IC are reduced.