An electron tube includes a housing having a window having an electromagnetic wave transmitting property, an electron emission plate disposed inside the housing, the electron emission plate emitting electrons, and a holding member disposed inside the housing and configured to hold the electron emission plate and to apply a voltage to the electron emission plate. The electron emission plate has a first main surface and a second main surface facing each other. The holding member has a base portion being in contact with the first main surface, and a plurality of electron emission plate biasing portions which are in contact with an edge of the second main surface and are configured to elastically bias the electron emission plate to the base portion. The holding member is electrically connected to the second main surface through the plurality of electron emission plate biasing portions.

An electron tube includes a housing having a window having an electromagnetic wave transmitting property, an electron emission plate disposed inside the housing, the electron emission plate emitting electrons, and a holding member disposed inside the housing and configured to hold the electron emission plate and to apply a voltage to the electron emission plate. The electron emission plate has a first main surface and a second main surface facing each other. The holding member has a base portion being in contact with the first main surface, and a plurality of electron emission plate biasing portions which are in contact with an edge of the second main surface and are configured to elastically bias the electron emission plate to the base portion. The holding member is electrically connected to the second main surface through the plurality of electron emission plate biasing portions.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

Methods and apparatus relating to light amplification technology that has the ability to transform and amplify light to be seen in the visible spectrum by the user (FIG. 2). The biologically-based light amplification system including a reaction center, a proton gradient area, and a light amplification area, and may be configured such that light entering the system through the reaction center produces a proton gradient, which in turn acts upon reactants in the proton gradient area, and then causes a product to enter the light amplification area and thereby drive a bioluminescent or phosphorescent reaction to amplify the light The methods and apparatus use solely biological processes without any external power supply.

The present invention improves sensitivity of the ultraviolet band of a photoelectric surface. A photoelectric surface includes a window material that transmits ultraviolet rays, a conductive film that is formed on the window material and has conductivity, an intermediate film 4 that is formed on the conductive film and is formed of MgF.sub.2, and a photoelectric conversion film that is formed on the intermediate film 4 and is formed of CsTe. Since the photoelectric surface includes the intermediate film 4 formed of MgF.sub.2, the sensitivity of the ultraviolet band is improved.

The present invention improves sensitivity of the ultraviolet band of a photoelectric surface. A photoelectric surface includes a window material that transmits ultraviolet rays, a conductive film that is formed on the window material and has conductivity, an intermediate film 4 that is formed on the conductive film and is formed of MgF.sub.2, and a photoelectric conversion film that is formed on the intermediate film 4 and is formed of CsTe. Since the photoelectric surface includes the intermediate film 4 formed of MgF.sub.2, the sensitivity of the ultraviolet band is improved.

A photocathode epitaxial structure. The photocathode epitaxial structure includes a binary compound substrate material. The photocathode epitaxial structure further includes an active device absorber layer forming a portion of a p-type device photocathode formed on the binary compound substrate material. The active device absorber layer comprising at least a quaternary or greater material structure configured to be lattice matched with the substrate material to reduce strain to allow charge carriers to go further in the active device absorber layer implemented in the photocathode of a nightvision system.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

Methods and apparatus relating to light amplification technology that has the ability to transform and amplify light to be seen in the visible spectrum by the user (FIG. 2). The biologically-based light amplification system including a reaction center, a proton gradient area, and a light amplification area, and may be configured such that light entering the system through the reaction center produces a proton gradient, which in turn acts upon reactants in the proton gradient area, and then causes a product to enter the light amplification area and thereby drive a bioluminescent or phosphorescent reaction to amplify the light The methods and apparatus use solely biological processes without any external power supply.