A display system achieving a screen finish using vacuum suction. The system includes an optical element with an exterior surface, and an optical film is positioned over the exterior surface. The optical film is formed of a flexible optical material such as an anti-reflective material. The display system includes a retention frame supporting the optical element and retaining outer edges of the optical film against the exterior surface. The display system includes a vacuum unit in fluidic communication with a gap between the inner side of the optical film and the exterior surface of the optical element. The vacuum unit operates to pump gas out of the gap to draw a vacuum on the gap and may be operated on an ongoing basis to retain this vacuum. The optical element may be a video monitor, with the exterior surface being the display screen.

A display system achieving a screen finish using vacuum suction. The system includes an optical element with an exterior surface, and an optical film is positioned over the exterior surface. The optical film is formed of a flexible optical material such as an anti-reflective material. The display system includes a retention frame supporting the optical element and retaining outer edges of the optical film against the exterior surface. The display system includes a vacuum unit in fluidic communication with a gap between the inner side of the optical film and the exterior surface of the optical element. The vacuum unit operates to pump gas out of the gap to draw a vacuum on the gap and may be operated on an ongoing basis to retain this vacuum. The optical element may be a video monitor, with the exterior surface being the display screen.

The present invention relates to a glass plate including a first main surface subjected to antiglare treatment, and a second main surface opposed to the first main surface, in which a clarity index value T, a reflection image diffusiveness index value R and an anti-sparkle index value S satisfy respective relations of: clarity index value T0.8; reflection image diffusiveness index value R0.01; and anti-sparkle index value S0.85; and a transmission haze measured by a method according to JIS K 7136 (2000) being 15% or less. The glass plate of the present invention is excellent in clarity, reflection image diffusiveness and anti-sparkle, and also excellent in reproducibility of color.

A photocathode for use in vacuum electronic devices has a bandgap gradient across the thickness (or depth) of the photocathode between the emitting surface and the opposing surface. This bandgap gradient compensates for depth-dependent variations in transport energetics. When the bandgap energy E.sub.BG(z) is increased for electrons with shorter path lengths to the emitting surface and decreased for electrons with longer path lengths to the emitting surface, such that the sum of E.sub.BG(z) and the scattering energy is substantially constant or similar for electrons photoexcited at all locations within the photocathode, the energies of the emitted electrons may be more similar (have less variability), and the emittance of the electron beam may be desirably decreased. The photocathode may be formed of a III-V semiconductor such as InGaN or an oxide semiconductor such as GaInO.

A photocathode for use in vacuum electronic devices has a bandgap gradient across the thickness (or depth) of the photocathode between the emitting surface and the opposing surface. This bandgap gradient compensates for depth-dependent variations in transport energetics. When the bandgap energy E.sub.BG(z) is increased for electrons with shorter path lengths to the emitting surface and decreased for electrons with longer path lengths to the emitting surface, such that the sum of E.sub.BG(z) and the scattering energy is substantially constant or similar for electrons photoexcited at all locations within the photocathode, the energies of the emitted electrons may be more similar (have less variability), and the emittance of the electron beam may be desirably decreased. The photocathode may be formed of a III-V semiconductor such as InGaN or an oxide semiconductor such as GaInO.

Methods and systems to intensify an image, such as in a night vision apparatus, include a semi-conductor structure that includes a first region that is doped to generate a plurality of electrons and corresponding holes for each electron that impinges a reception surface of the semi-conductor structure, a second region that is doped to attract the holes, an electrically conductive region to output the holes from the second region, and a third region that is doped to restrict a flow of the holes from the second region to the electrically conductive region such that some of the holes will combine with some of the plurality of electrons within the first region. The first region further includes an emission area from which to emit remaining ones of the plurality of electrons.

Methods and systems to intensify an image, such as in a night vision apparatus, include a semi-conductor structure that includes a first region that is doped to generate a plurality of electrons and corresponding holes for each electron that impinges a reception surface of the semi-conductor structure, a second region that is doped to attract the holes, an electrically conductive region to output the holes from the second region, and a third region that is doped to restrict a flow of the holes from the second region to the electrically conductive region such that some of the holes will combine with some of the plurality of electrons within the first region. The first region further includes an emission area from which to emit remaining ones of the plurality of electrons.