Technology is described for an electron gun driver including a half bridge driver circuit and a drive controller. The half bridge driver circuit includes a drive circuit configured to generate a grid drive voltage for a grid connection of an electron gun, and a cutoff circuit configured to generate a grid cutoff voltage for the grid connection of the electron gun, and a gate driver configured to switch between the grid drive voltage and the grid cutoff voltage. The drive controller is configured to generate a pulse input to the drive circuit and cutoff circuit and grid switching signals for the gate driver.

Technology is described for an electron gun driver including a half bridge driver circuit and a drive controller. The half bridge driver circuit includes a drive circuit configured to generate a grid drive voltage for a grid connection of an electron gun, and a cutoff circuit configured to generate a grid cutoff voltage for the grid connection of the electron gun, and a gate driver configured to switch between the grid drive voltage and the grid cutoff voltage. The drive controller is configured to generate a pulse input to the drive circuit and cutoff circuit and grid switching signals for the gate driver.

An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.

An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.

[Object] To provide an electron source that is lightweight, simple in configuration, and capable of suppressing characteristic degradation or recovering characteristics without causing an increase in power consumption.

[Solving Means] A CNT electron source includes: a CNT emitter 32 for emitting electrons; a gate electrode 33 for extracting electrons from the CNT emitter 32; and a gate power supply connection switching relay 37a and a CNT emitter grounding switching relay 37b that cause the gate electrode 33 to emit electrons to irradiate the CNT emitter with electrons.

[Object] To provide an electron source that is lightweight, simple in configuration, and capable of suppressing characteristic degradation or recovering characteristics without causing an increase in power consumption.

[Solving Means] A CNT electron source includes: a CNT emitter 32 for emitting electrons; a gate electrode 33 for extracting electrons from the CNT emitter 32; and a gate power supply connection switching relay 37a and a CNT emitter grounding switching relay 37b that cause the gate electrode 33 to emit electrons to irradiate the CNT emitter with electrons.

An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.

Systems and methods are described herein for generating, modulating, and/or shaping a plurality of electron beams to be used in various lithography processes. In some aspects, multiple beams may be individually modulated to create a pattern which is projected onto a surface proximate to the source of the electrons. In other aspects, the multiple beams may be projected at a distance through a lensing system. Targets for the electron patterns include surfaces which react with the electrons to undergo chemical or structural change. In some aspects, a parallel electron multi-beam source is constructed using edge emitters formed where etching, cleaving, or other processes have created a surface perpendicular to the edge of one conductor which is adjacent to a thin insulator which separates it from a second conductor.

Systems and methods are described herein for generating, modulating, and/or shaping a plurality of electron beams to be used in various lithography processes. In some aspects, multiple beams may be individually modulated to create a pattern which is projected onto a surface proximate to the source of the electrons. In other aspects, the multiple beams may be projected at a distance through a lensing system. Targets for the electron patterns include surfaces which react with the electrons to undergo chemical or structural change. In some aspects, a parallel electron multi-beam source is constructed using edge emitters formed where etching, cleaving, or other processes have created a surface perpendicular to the edge of one conductor which is adjacent to a thin insulator which separates it from a second conductor.

An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.