A method of manufacturing a multi-layer image intensifier wafer includes fabricating first and second glass wafers, each having an array of cavities that extend between respective openings in first and second surfaces of the respective glass wafer; doping a semiconductor wafer to generate a plurality of electrons for each electron that impinges a first surface of the semiconductor wafer and to direct the plurality of electrons to a second surface of the semiconductor wafer, bonding a photo-cathode wafer to the first glass wafer; bonding the semiconductor wafer between the first and second glass wafers, and bonding the second glass wafer between the semiconductor wafer and an anode wafer (e.g., a phosphor screen or other electron detector). A section of the multi-layer image intensifier wafer may be sliced and evacuated to provide a multi-layer image intensifier.

Methods and systems to intensify an image, such as in a night vision apparatus, include a semi-conductor structure that includes a first region that is doped to generate a plurality of electrons and corresponding holes for each electron that impinges a reception surface of the semi-conductor structure, a second region that is doped to attract the holes, an electrically conductive region to output the holes from the second region, and a third region that is doped to restrict a flow of the holes from the second region to the electrically conductive region such that some of the holes will combine with some of the plurality of electrons within the first region. The first region further includes an emission area from which to emit remaining ones of the plurality of electrons.