A 3D imaging system and method for a nanostructure is provided. The 3D imaging system includes a master control center, a vacuum chamber, an electron gun, an imaging signal detector, a broad ion beam source device, and a laser rangefinder component. A sample loading device is arranged inside the vacuum chamber. A radial source of the broad ion beam source device is arranged in parallel with an etched surface of a sample. The laser rangefinder component includes a first laser rangefinder configured to measure a distance from a top surface of an ion beam shielding plate and a second laser rangefinder configured to measure a distance from a non-etched area of the sample, the first laser rangefinder and the second laser rangefinder are arranged side by side, and a laser traveling direction is perpendicular to a traveling direction of the broad ion beam source device.

A particle beam device has a particle source, an extraction stop, an anode stop and a beam tube. A driver system of the particle beam device is configured to apply an electrical excitation stop potential to the extraction stop, to apply an electrical anode stop potential, able to be set in a variable manner, to the anode stop and to apply an electrical beam tube potential to the beam tube. A controller of the particle beam device is configured to control the driver system such that a voltage between the extraction stop and the anode stop is able to be set in a variable manner, as a result of which a current strength of the particle beam passing through the aperture of the anode stop is able to be set in a variable manner.

There is provided a technique capable of shortening a photographing time and obtaining a more accurate photographed image when photographing a sample SAM using a charged particle beam device 1. The charged particle beam device 1 includes an electron gun 3, an objective lens 6, a stage 8, detectors 10 and 11, an integrated control unit C0, a photographing function, and an autofocus function. Each of a plurality of photographing visual fields is focused in a focus value calculation visual field 64 adjacent to a designated visual field 61 designated as a photographing target among the plurality of photographing visual fields, and a focus value calculated in the focus value calculation visual field 64 is used for calculating focus values of each of the plurality of photographing visual fields.

There is provided a technique capable of shortening a photographing time and obtaining a more accurate photographed image when photographing a sample SAM using a charged particle beam device 1. The charged particle beam device 1 includes an electron gun 3, an objective lens 6, a stage 8, detectors 10 and 11, an integrated control unit C0, a photographing function, and an autofocus function. Each of a plurality of photographing visual fields is focused in a focus value calculation visual field 64 adjacent to a designated visual field 61 designated as a photographing target among the plurality of photographing visual fields, and a focus value calculated in the focus value calculation visual field 64 is used for calculating focus values of each of the plurality of photographing visual fields.

The invention provides a power supply module and a charged particle beam device that are capable of reducing ripple noise. A high-voltage generation circuit 101 includes booster circuits CPa and CPb of two systems that are configured to be symmetrical to each other, and performs a boosting operation by using a capacitive element and a diode in the booster circuits CPa and CPb of the two systems. The high-voltage generation circuit is housed in a housing and a reference power supply voltage is applied thereto. A left electrode 102a is fixedly provided in the vicinity of one of the booster circuits CPa and CPb of the two systems in the housing, and a right electrode 102b is fixedly provided in the vicinity of the other of the booster circuits CPa and CPb of the two systems in the housing. A stray capacitance adjustment circuit 100a adjusts capacitance values of stray capacitances of the booster circuits CPa and CPb of the two systems by electrically controlling an electrical connection characteristic between the left electrode 102a and the reference power supply voltage 104 and an electrical connection characteristic between the right electrode 102b and the reference power supply voltage 104

The invention provides a power supply module and a charged particle beam device that are capable of reducing ripple noise. A high-voltage generation circuit 101 includes booster circuits CPa and CPb of two systems that are configured to be symmetrical to each other, and performs a boosting operation by using a capacitive element and a diode in the booster circuits CPa and CPb of the two systems. The high-voltage generation circuit is housed in a housing and a reference power supply voltage is applied thereto. A left electrode 102a is fixedly provided in the vicinity of one of the booster circuits CPa and CPb of the two systems in the housing, and a right electrode 102b is fixedly provided in the vicinity of the other of the booster circuits CPa and CPb of the two systems in the housing. A stray capacitance adjustment circuit 100a adjusts capacitance values of stray capacitances of the booster circuits CPa and CPb of the two systems by electrically controlling an electrical connection characteristic between the left electrode 102a and the reference power supply voltage 104 and an electrical connection characteristic between the right electrode 102b and the reference power supply voltage 104

The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

A method for estimating the cathode lifetime of an electron gun includes recording the change amount, per unit temperature increase of the cathode of an electron gun which emits an electron beam, with respect to a parameter value relating to the electron beam, to be recorded in relation to the usage time of the cathode, and estimating the lifetime of the cathode by one of estimating a time obtained by adding a predetermined time to a time at which the change amount recorded a plurality of times becomes lower than a prescribed value as the lifetime of the cathode, and estimating, using an approximate line obtained by approximating the change amount recorded a plurality of times, a time at which the change amount becomes zero as the lifetime of the cathode, and outputting the estimated lifetime.

The present disclosure is related to a Schottky thermal field emission (TFE) source for emitting an electron beam. Exemplary embodiments can provide the acquisition of high-resolution emission images of Schottky TFE source and compute usable beam current and brightness based on experimentally developed usable current criteria. Advantages of these exemplary embodiments include: (1) obtaining usable beam current and brightness of a Schottky TFE source can be important with reference to Schottky TFE development and quality inspection, and (2) optimizing Schottky TFE operation modes so as to maximize Schottky TFE usable beam current and brightness can enable operation of multi-beam electron optical tools.

The disclosure relates to a photolithography method based on electronic beam. The method includes: providing an electronic beam; making the electron beam transmit a two dimensional nanomaterial to form a transmission electron beam and a number of diffraction electron beams; shielding the transmission electron beam; and radiating a surface of an object by the plurality of diffraction electron beams. The photolithography method is high efficiency and has low cost.