The invention relates to a liquid metal-ion beam system (1) or liquid metal electron beam system, including: a conductive emitter electrode (2), a conductive extractor electrode (3) opposite to the emitter electrode (2), a liquid metal reservoir (4) which is fluidically connected to the emitter electrode (2) for transporting liquid metal to the emitter electrode (2), a control unit (5) which is configured to apply a periodically varying operating voltage between emitter electrode (2) and extractor electrode (3).

A Schottky thermal field emitter (TFE) source integrated with a beam splitter by a standoff, which supports the beam splitter above the Schottky TFE extractor faceplate by a distance of 0.05 mm to 2 mm. The beam splitter includes a microhole array integrated with the standoff and being disposed opposite the extractor faceplate, the microhole array having a plurality of microholes that split the electron beam generated by the Schottky TFE into a plurality of beamlets. The support and extractor may be fabricated from the same material or from different materials. The support may be formed from a high temperature resistive material, which causes a potential difference between the extractor and the microhole array. This potential difference creates positively charged electrostatic lenses at the microholes, which increases current in the individual beamlets. Voltage on the microarray plate may be varied to achieve a high beamlet current.

A Schottky thermal field emitter (TFE) source integrated with a beam splitter by a standoff, which supports the beam splitter above the Schottky TFE extractor faceplate by a distance of 0.05 mm to 2 mm. The beam splitter includes a microhole array integrated with the standoff and being disposed opposite the extractor faceplate, the microhole array having a plurality of microholes that split the electron beam generated by the Schottky TFE into a plurality of beamlets. The support and extractor may be fabricated from the same material or from different materials. The support may be formed from a high temperature resistive material, which causes a potential difference between the extractor and the microhole array. This potential difference creates positively charged electrostatic lenses at the microholes, which increases current in the individual beamlets. Voltage on the microarray plate may be varied to achieve a high beamlet current.

An e-beam device includes a cold-field emission source to emit electrons and an extractor electrode to be positively biased with respect to the cold-field emission source to extract the electrons from the cold-field emission source. The extractor electrode has a first opening for the electrons. The e-beam device also includes a mirror electrode with a second opening for the electrons. The mirror electrode is configurable to be positively biased with respect to the extractor electrode during a first mode of operation and to be negatively biased with respect to the extractor electrode during a second mode of operation. The extractor electrode is disposed between the cold-field emission source and the mirror electrode. The e-beam device further includes an anode to be positively biased with respect to the extractor electrode and the cold-field emission source. The mirror electrode is disposed between the extractor electrode and the anode.

An e-beam device includes a cold-field emission source to emit electrons and an extractor electrode to be positively biased with respect to the cold-field emission source to extract the electrons from the cold-field emission source. The extractor electrode has a first opening for the electrons. The e-beam device also includes a mirror electrode with a second opening for the electrons. The mirror electrode is configurable to be positively biased with respect to the extractor electrode during a first mode of operation and to be negatively biased with respect to the extractor electrode during a second mode of operation. The extractor electrode is disposed between the cold-field emission source and the mirror electrode. The e-beam device further includes an anode to be positively biased with respect to the extractor electrode and the cold-field emission source. The mirror electrode is disposed between the extractor electrode and the anode.

The present disclosure provides a charged particle beam device capable of simultaneously achieving protection of a charged particle source against electrical discharging inside a charged particle gun and highly accurate control of the charged particle gun, for both DC and AC components. A charged particle gun according to the present disclosure is configured such that an extraction voltage and an acceleration voltage are superposed and supplied to a charged particle beam source, a wiring between the charged particle beam source and a voltage circuit is covered with first and second enclosures, the first enclosure is configured to be connected to an extraction electrode, and the second enclosure is configured to be connected to an acceleration electrode and to a reference voltage of the voltage circuit.

The present disclosure provides a charged particle beam device capable of simultaneously achieving protection of a charged particle source against electrical discharging inside a charged particle gun and highly accurate control of the charged particle gun, for both DC and AC components. A charged particle gun according to the present disclosure is configured such that an extraction voltage and an acceleration voltage are superposed and supplied to a charged particle beam source, a wiring between the charged particle beam source and a voltage circuit is covered with first and second enclosures, the first enclosure is configured to be connected to an extraction electrode, and the second enclosure is configured to be connected to an acceleration electrode and to a reference voltage of the voltage circuit.

The electron gun is provided with a first anode electrode and a second anode electrode to generate an acceleration and deceleration electric field. A lens electric field makes it possible to irradiate a sample with an electron beam emitted from a part outside an optical axis of the photoelectric film without being blocked by a differential exhaust diaphragm. A wide range of electron beams off-optical axis can be used even in a high-brightness photocathode that requires high vacuum. As a result, the photoelectric film and the electron gun can be extended in life, can be stabilized, and can be increased in brightness. Further, it is possible to facilitate a control of emitting electron beams from a plurality of positions on the photoelectric film, a timing control of emitting electron beams from a plurality of positions, a condition control of an electron beam in an electron microscope using electron beams.

The electron gun is provided with a first anode electrode and a second anode electrode to generate an acceleration and deceleration electric field. A lens electric field makes it possible to irradiate a sample with an electron beam emitted from a part outside an optical axis of the photoelectric film without being blocked by a differential exhaust diaphragm. A wide range of electron beams off-optical axis can be used even in a high-brightness photocathode that requires high vacuum. As a result, the photoelectric film and the electron gun can be extended in life, can be stabilized, and can be increased in brightness. Further, it is possible to facilitate a control of emitting electron beams from a plurality of positions on the photoelectric film, a timing control of emitting electron beams from a plurality of positions, a condition control of an electron beam in an electron microscope using electron beams.

It is a CNT device (1) (carbon-metal structure) equipped with a carbon nanotube layer (2) (CNT layer 2; same hereafter) on a metal pedestal (4). The metal pedestal (4) is brazed to the CNT layer (2) with a brazing material layer (3) interposed therebetween. When manufacturing the CNT device (1), firstly, the CNT layer (2) is formed on a heat-resistant textured substrate (6). Next, the metal pedestal (4) is brazed to the CNT layer (2) that is on the heat-resistant textured substrate (6) with the brazing material layer (3) interposed therebetween. Then, the metal pedestal (4) (and the CNT layer 2) is peeled off the heat-resistant textured substrate (6) to transfer the CNT layer (2) from the heat-resistant textured substrate (6) to the metal pedestal (4).