Disclosed embodiments apply electron beams to substrates for microelectronic workpieces to improve plasma etch and deposition processes. The electron beams are generated and directed to substrate surfaces using DC (direct current) biasing, RF (radio frequency) plasma sources, and/or other electron beam generation and control techniques. For certain embodiments, DC-biased RF plasma sources, such as DC superposition (DCS) or hybrid DC-RF sources, are used to provide controllable electron beams on surfaces opposite a DC-biased electrode. For certain further embodiments, the DC-biased electrode is pulsed. Further, electron beams can also be generated through electron beam extraction from external and/or non-ambipolar sources. The disclosed techniques can also be used with additional electron beam sources and/or additional etch or deposition processes.

The invention provides an electron beam apparatus that reduces a time required for an electron gun chamber to which a sputter ion pump and a non-evaporable getter pump are connected to reach an extreme high vacuum state. The electron beam apparatus includes an electron gun configured to emit an electron beam and the electron gun chamber to which the sputter ion pump and the non-evaporable getter pump are connected. The electron beam apparatus further includes a gas supply unit configured to supply at least one of hydrogen, oxygen, carbon monoxide, and carbon dioxide to the electron gun chamber.

The invention provides an electron beam apparatus that reduces a time required for an electron gun chamber to which a sputter ion pump and a non-evaporable getter pump are connected to reach an extreme high vacuum state. The electron beam apparatus includes an electron gun configured to emit an electron beam and the electron gun chamber to which the sputter ion pump and the non-evaporable getter pump are connected. The electron beam apparatus further includes a gas supply unit configured to supply at least one of hydrogen, oxygen, carbon monoxide, and carbon dioxide to the electron gun chamber.

An ion beam neutralization system, often referred to as a plasma bridge neutralizer (PBN), as part of an ion beam (etch) system. The system utilizes an improved filament thermo-electron emitter PBN design, that when utilized in a particular method of operation, greatly extends filament life and minimizes variation in neutralizer operating parameters for long periods of operation. The PBN includes a solenoidal electromagnetic that produces an axial magnetic field within the PBN and a magnetic concentrator that facilitates the alignment of the magnetic field and inhibits stray fields. The PBN can readily provide a filament lifetime of at least 500 hours.

In an embodiment, a system is provided that includes an electron gun, a focusing system, and a housing. The electron gun can include a cold cathode electron source and an extraction electrode. The focusing system can be configured to focus a beam of electrons extracted from the electron gun to a focal region. The housing can include the electron gun and extend along a housing axis in the direction of the electron beam. The cold cathode source is configured to emit electrons at a first operating pressure that is higher than a second operating pressure at the focal region of the electron beam.

A plasma flood gun includes a filament to emit first electrons based on a first filament current induced in the filament to heat the filament to a first temperature at a first time. The first electrons interact with an inert gas in an arc plasma chamber to generate a first plasma. A filament resistance meter measures a first filament resistance of the filament, in-situ, during generation of the first plasma. A filament current source adjusts, based on the first filament resistance, the first filament current induced in the filament at the first time to a second filament current induced in the filament at a second time to generate a second plasma in the arc plasma chamber at the second time.

An apparatus includes at least one electron beam generator for generating accelerated electrons with which bulk material particles are impingeable during free fall. The electron beam generator has an annular design in which the electrons are emitted and accelerated by an annular cathode. The electrons exit from an electron outlet window in the direction of the ring axis. The annular electron beam generator is arranged in such a way that the ring axis of the electron beam generator is oriented perpendicular to, or at an angle of up to 45? from the horizontal. The apparatus may further include a device for separating bulk material particles arranged above the annular electron beam generator, the bottom wall of said device having at least one opening out of which the bulk material particles fall and, from there, fall through the ring which is formed by the electron beam generator.

A system for manufacturing of three dimensional objects by layered deposition is provided. The system includes a base substrate for formation of three dimensional objects placed on a supporting plate; a functional assembly comprising a gas-discharge electron beam gun, a feedstock guide, a cold annular cathode and two annular anode electrodes, a high voltage power supply of the gas-discharge electron beam gun, a system of precise positioning of the supporting plate with the base substrate), a vacuum tight operation chamber, a vacuum subsystem for creating of necessary vacuum inside said operating chamber, a control system and a magnetic lens. The lens is placed on the underside of the gas-discharge electron beam gun coaxially with it and with the feedstock guide, providing the possibility of transformation of a primary hollow electron beam to the shape of a hollow inverted cone after leaving the discharge chamber of the gas-discharge electron beam gun.

A plasma flood gun includes a filament to emit first electrons based on a first filament current induced in the filament to heat the filament to a first temperature at a first time. The first electrons interact with an inert gas in an arc plasma chamber to generate a first plasma. A filament resistance meter measures a first filament resistance of the filament, in-situ, during generation of the first plasma. A filament current source adjusts, based on the first filament resistance, the first filament current induced in the filament at the first time to a second filament current induced in the filament at a second time to generate a second plasma in the arc plasma chamber at the second time.

The present disclosure provides a charged particle source arrangement for a charged particle beam device. The charged particle source arrangement includes: a first vacuum region and a second vacuum region; a charged particle source in the first vacuum region, wherein the charged particle source is configured to generate a primary charged particle beam; and a membrane configured to provide a gas barrier between the first vacuum region and the second vacuum region, and wherein the membrane is configured to let at least a portion of the primary charged particle beam pass through the membrane, wherein a first vacuum generation device is connectable to the first vacuum region and a second vacuum generation device is connectable to the second vacuum region.