A multiple electron beam image acquisition method includes performing scanning with a representative secondary electron beam emitted, based on temporary secondary electron beam deflection conditions, for each of plural positions in a primary electron beam deflection range of a representative primary electron beam, acquiring plural coordinates corresponding to the plural positions, based on detected images of the representative secondary electron beam, each detected at any one of the plural positions in the primary electron beam deflection range of the representative primary electron beam, and calculating, using the plural coordinates acquired, secondary electron beam deflection conditions to cancel movement of the representative secondary electron beam due to movement of the representative primary electron beam in the primary electron beam deflection range of the representative primary electron beam and to fix the irradiation position of the representative secondary electron beam to the predetermined detection element.

A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter (105) for generating a charged particle beam (11) propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (120), including a first multi-aperture electrode (121) with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode (122) with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles (123) for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly (120) is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens (150) for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens (130) for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.

Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.

Disclosed herein is a multi-beam charged particle column configured to project a multi-beam of charged particles towards a target, the multi-beam charged particle column comprising at least one aperture array comprising at least two different aperture patterns; and a rotator configured to rotate the aperture array between the different aperture patterns.

A charged particle beam device including: a charged particle beam source which emits a charged particle beam; a blanking device which has an electrostatic deflector that deflects and blocks the charged particle beam; an irradiation optical system which irradiates a specimen with the charged particle beam; and a control unit which controls the electrostatic deflector, the control unit performing processing of: acquiring a target value of a dose of the charged particle beam for the specimen; setting a ratio A/B of a time A during which the charged particle beam is not blocked to a unit time B (where A≠B, A≠0), based on the target value; and operating the electrostatic deflector based on the ratio.

A method of influencing a charged particle beam (11) propagating along an optical axis (A) is described. The method includes: guiding the charged particle beam (11) through at least one opening (102) of a multipole device (100, 200) that comprises a first multipole (110, 210) with four or more first electrodes (111, 211) and a second multipole (120, 220) with four or more second electrodes (121, 221) arranged in the same sectional plane, the first electrodes and the second electrodes being arranged alternately around the at least one opening (102); and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner. Further, a multipole device (100, 200) with a first multipole (110, 210) and a second multipole (120, 220) provided on the same substrate as well as a charged particle beam apparatus (500) with a multipole device (100, 200) are provided.

A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter (105) for generating a charged particle beam (11) propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (120), including a first multi-aperture electrode (121) with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode (122) with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles (123) for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly (120) is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens (150) for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens (130) for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.

The focused ion beam apparatus includes: an ion source configured to generate ions; a first electrostatic lens configured to accelerate and focus the ions to form an ion beam; a beam booster electrode configured to accelerate the ion beam to a higher level; one or a plurality of electrodes, which are placed in the beam booster electrode, and are configured to electrostatically deflect the ion beam; a second electrostatic lens, which is provided between the one or plurality of electrodes and a sample table, and is configured to focus the ion beam applied with a voltage; and a processing unit configured to obtain a measurement condition, and set at least one of voltages to be applied to the one or plurality of electrodes or a voltage to be applied to each of the first electrostatic lens and the second electrostatic lens, based on the obtained measurement condition.

The system described herein relates to a particle beam apparatus for analyzing and/or for processing an object and to a method for operating a particle beam apparatus. The particle beam apparatus is designed for example as an electron beam apparatus and/or an ion beam apparatus. The particle beam apparatus comprises a beam deflection device, for example an objective lens, which is provided with a first coil and a second coil. The first coil is operated with a first coil current. The second coil is operated with a second coil current. The first coil current and/or the second coil current may always be controlled in such a way that the sum of the first coil current and the second coil current (the summation current) or the difference between the first coil current and the second coil current (the difference current) is controlled to a setpoint value.

An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.