An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.

A compact two-dimensional (2D) scanning magnet for scanning ion beams is provided. The compact 2D scanning magnet may include an outer double-helix coil and an inner double-helix coil that is disposed within the outer double-helix coil and is rotated about an axis relative to the outer double-helix coil. The outer double-helix coil may include a first outer coil configured to receive an input electrical current through the first outer coil in a first direction, and a second outer coil configured to receive the input electrical current through the second outer coil in a second direction. The inner double-helix coil may include a first inner coil configured to receive a second input electrical current through the first inner coil in the first direction, and a second inner coil configured to receive the second input electrical current through the second inner coil in the second direction.

Disclosed in the embodiments of the present invention is an electron microscope, comprising: an electron source, which is configured to generate an electron beam; a first beam conduit, which is configured to accelerate the electron beam; a second beam conduit, which is configured to accelerate the electron beam; a first detector, which is disposed between the first beam conduit and the second beam conduit and configured to receive secondary electrons generated by the electron beam acting on a sample to be tested; and a control electrode, which is disposed between the first detector and an optical axis of the electron beam and configured to change the direction of movement of backscattered electrons and the secondary electrons generated by the electron beam acting on said sample. By means of the electron microscope provided by the embodiments of the present invention, secondary electrons generated by a pure electron beam acting on a sample to be tested can be detected.

Disclosed in the embodiments of the present invention is an electron microscope, comprising: an electron source, which is configured to generate an electron beam; a first beam conduit, which is configured to accelerate the electron beam; a second beam conduit, which is configured to accelerate the electron beam; a first detector, which is disposed between the first beam conduit and the second beam conduit and configured to receive secondary electrons generated by the electron beam acting on a sample to be tested; and a control electrode, which is disposed between the first detector and an optical axis of the electron beam and configured to change the direction of movement of backscattered electrons and the secondary electrons generated by the electron beam acting on said sample. By means of the electron microscope provided by the embodiments of the present invention, secondary electrons generated by a pure electron beam acting on a sample to be tested can be detected.

A method of depositing material over a sample in a deposition region of the sample with a charged particle beam column, the method comprising: positioning a sample within a vacuum chamber such that the deposition region is under a field of view of the charged particle beam column; cooling the deposition region by contacting the sample with a cyro-nanomanipulator tool in an area adjacent to the deposition region; injecting a deposition precursor gas into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with a charged particle beam column and focusing the charged particle beam on the sample; and scanning the focused electron beam across the localized region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.

A method for electron microscopy comprises: adjusting at least one of an electron beam and an image beam in such a way that off-axial aberrations inflicted on at least one of the electron beam and the image beam are minimized, the adjusting performed by using a beam adjusting component to obtain at least one modified image beam, wherein the adjusting comprises applying both shifting and tilting to at least one of the electron beam and the image beam and wherein the amount of tilting of at least one of the electron beam and the image beam depends on the amount of shifting of at least one of the electron beam and the image beam respectively and wherein the amount of tilting is computed based on at least one of coma and astigmatism introduced as a consequence of the shift.

A method for electron microscopy comprises: adjusting at least one of an electron beam and an image beam in such a way that off-axial aberrations inflicted on at least one of the electron beam and the image beam are minimized, the adjusting performed by using a beam adjusting component to obtain at least one modified image beam, wherein the adjusting comprises applying both shifting and tilting to at least one of the electron beam and the image beam and wherein the amount of tilting of at least one of the electron beam and the image beam depends on the amount of shifting of at least one of the electron beam and the image beam respectively and wherein the amount of tilting is computed based on at least one of coma and astigmatism introduced as a consequence of the shift.

A method of patterning a substrate. The method may include providing a cavity in a layer, disposed on the substrate, the cavity having a first length along a first direction and a first width along a second direction, perpendicular to the first direction, and wherein the layer has a first height along a third direction, perpendicular to the first direction and the second direction. The method may include depositing a sacrificial layer over the cavity in a first deposition procedure; and directing angled ions to the cavity in a first exposure, wherein the cavity is etched, and wherein after the first exposure, the cavity has a second length along the first direction, greater than the first length, and wherein the cavity has a second width along the second direction, no greater than the first width.