The invention relates to a sample transfer device (10) for reception of a sample, having a transfer rod (4) that is configured for reception of a sample holder, the sample holder to be arranged in a chamber (1) of the sample transfer device (10) for the purpose of transferring the sample to a processing unit or analytical unit (200), at least one measurement device (3, 8) for measuring a physical variable being arranged inside the sample transfer device (10).

A sample cartridge carrier apparatus is coupled with a focused ion beam processing apparatus (FIB processing apparatus). A guide mechanism is configured to guide a series of movements of a sample cartridge holder to allow a sample cartridge to be held by a carrier base on a sub stage. Sub cooling equipment is configured to cool the sample cartridge via the sub stage. A carrier mechanism carries the carrier base between the sub stage and a main stage.

A metal surface modification apparatus having a tilting unit includes holding jigs having respective lower parts having curved surfaces to hold the implants; a movable holding base provided with a plurality of receiving depressions to have curved surfaces corresponding to the curved surfaces of the lower parts; and a stationary pushing plate disposed on the movable holding base to cover the movable holding base, and configured to be moved relative to the movable holding base and to have a plurality of through holes positioned to face the receiving depressions.

Sample stage, e.g. for use in a scanning electron microscope. The sample stage includes a base, a sample carrier, and an actuator assembly arranged for moving the sample carrier in at least one direction substantially parallel to the base. The actuator assembly is arranged so as not to contribute to the mechanical stiffness of the sample stage from the sample carrier to the base.

An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

A charged-particle-beam device is provided with a data processing unit that removes, from a detector signal, the effect that scattering of a primary charged-particle beam before the primary charged-particle beam reaches a specimen has on the spot shape of the primary charged-particle beam. For example, when using an electron microscope to observe a specimen in a non-vacuum atmosphere, the effect that scattering of a primary charged-particle beam due to a barrier film or a gas present in a non-vacuum space has on the spot shape of the primary charged-particle beam is removed from a signal acquired by a detector. This makes it easy to obtain high-quality images.

An inspection apparatus includes beam generation means, a primary optical system, a secondary optical system and an image processing system. Irradiation energy of the beam is set in an energy region where mirror electrons are emitted from the inspection object as the secondary charged particles due to the beam irradiation. The secondary optical system includes a camera for detecting the secondary charged particles, a numerical aperture whose position is adjustable along an optical axis direction and a lens that forms an image of the secondary charged particles that have passed through the numerical aperture on an image surface of the camera. In the image processing system, the image is formed under an aperture imaging condition where the position of the numerical aperture is located on an object surface to acquire an image.

A sample exchange device includes a first transport mechanism that includes a grip portion that grips a sample holding member and transports a sample holding member to a sample exchange chamber, a cooling unit that cools the sample exchange chamber, fiber sensors that detect whether or not the grip portion of the first transport mechanism grips the sample holding member in the sample exchange chamber, and a control unit. The control unit turns on the fiber sensors when the grip portion of the first transport mechanism enters the sample exchange chamber and turns off the fiber sensors after it is detected whether or not the grip portion of the first transport mechanism grips the sample holding member.

A charged particle beam apparatus includes: a specimen chamber; a specimen holder that is disposed in the specimen chamber; a specimen exchange chamber that is connected to the specimen chamber; a transporting mechanism that transports a specimen between the specimen chamber and the specimen exchange chamber; a first temperature sensor that measures a temperature of the specimen holder; a second temperature sensor that measures a temperature of the transporting mechanism; and a control unit. The control unit: calculates a temperature difference between the specimen holder and the transporting mechanism based on the temperature of the specimen holder and the temperature of the transporting mechanism when the control unit has received an instruction to transport a specimen; determining whether the temperature difference is a threshold or more; and stopping transportation of a specimen when the control unit has determined that the temperature difference is the threshold or more.