A ceramic coating system using an atmospheric pressure plasma generator is provided, which includes a vacuum chamber configured to maintain a vacuum therein, a support disposed inside the vacuum chamber and fixedly supporting a substrate, a plasma generator that generates active species through plasma discharge and includes a nozzle part wherein at least a portion of the nozzle part is disposed to face the substrate inside the vacuum chamber, and a particle providing apparatus that transfers ceramic particles to one side of the nozzle part.

A ceramic coating system using an atmospheric pressure plasma generator is provided, which includes a vacuum chamber configured to maintain a vacuum therein, a support disposed inside the vacuum chamber and fixedly supporting a substrate, a plasma generator that generates active species through plasma discharge and includes a nozzle part wherein at least a portion of the nozzle part is disposed to face the substrate inside the vacuum chamber, and a particle providing apparatus that transfers ceramic particles to one side of the nozzle part.

Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation.

Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation.

An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port.

An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port.

Disclosed herein is a connector for electrically connecting a feedthrough of a vacuum tool to a high voltage power source, the connector comprising: a connector wire assembly configured to be in electrical connection with a high voltage power source; and a connector insulator comprising a channel configured to extend into the connector insulator and to receive a feedthrough pin so as to electrically connect the connector wire assembly with the feedthrough pin; wherein the connector insulator is configured to engage with the feedthrough so that a boundary surface of the connector insulator extends substantially bi-directionally in the direction of the longitudinal axis of the channel.

Disclosed herein is a connector for electrically connecting a feedthrough of a vacuum tool to a high voltage power source, the connector comprising: a connector wire assembly configured to be in electrical connection with a high voltage power source; and a connector insulator comprising a channel configured to extend into the connector insulator and to receive a feedthrough pin so as to electrically connect the connector wire assembly with the feedthrough pin; wherein the connector insulator is configured to engage with the feedthrough so that a boundary surface of the connector insulator extends substantially bi-directionally in the direction of the longitudinal axis of the channel.

A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.