A system and method is provided for rapidly collecting high quality images of a specimen through controlling a re-focusable beam of an electron microscope. An intelligent acquisition system instructs the electron microscope to perform an initial low-resolution scan of a sample. A low-resolution image of the sample is received by the intelligent acquisition system as scanned image information from the electron microscope. The intelligent acquisition system then determines regions of interest within the low-resolution image and instructs the electron microscope to perform a high-resolution scan of the sample, only in areas of the sample corresponding to the determined regions of interest or portions of the determined regions of interest, so that other regions within the sample are not scanned at high-resolution, where the high-resolution scanning in the regions of interest is guided by a probability map using a deep neural network for segmentation.

A system and method is provided for rapidly collecting high quality images of a specimen through controlling a re-focusable beam of an electron microscope. An intelligent acquisition system instructs the electron microscope to perform an initial low-resolution scan of a sample. A low-resolution image of the sample is received by the intelligent acquisition system as scanned image information from the electron microscope. The intelligent acquisition system then determines regions of interest within the low-resolution image and instructs the electron microscope to perform a high-resolution scan of the sample, only in areas of the sample corresponding to the determined regions of interest or portions of the determined regions of interest, so that other regions within the sample are not scanned at high-resolution, where the high-resolution scanning in the regions of interest is guided by a probability map using a deep neural network for segmentation.

There is provided a charged particle beam apparatus that can reduce the processing time. A charged particle beam apparatus includes: an excitation control unit that controls a focal position by changing a control value of excitation of an electronic lens; an electrostatic field control unit that controls the focal position by changing a control value of an electrostatic field; a focal position height estimation unit that estimates a height of the focal position from the control value of the excitation of the electronic lens; and a control unit that controls the excitation control unit and the electrostatic field control unit. The control unit compares the height of the focal position estimated by the focal position height estimation unit with a height of a sample surface of a sample to be observed, and according to a result of comparison, determines whether it is necessary to change the control value of the excitation of the electronic lens before observing the sample.

There is provided a charged particle beam apparatus that can reduce the processing time. A charged particle beam apparatus includes: an excitation control unit that controls a focal position by changing a control value of excitation of an electronic lens; an electrostatic field control unit that controls the focal position by changing a control value of an electrostatic field; a focal position height estimation unit that estimates a height of the focal position from the control value of the excitation of the electronic lens; and a control unit that controls the excitation control unit and the electrostatic field control unit. The control unit compares the height of the focal position estimated by the focal position height estimation unit with a height of a sample surface of a sample to be observed, and according to a result of comparison, determines whether it is necessary to change the control value of the excitation of the electronic lens before observing the sample.

The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

A technique that enables automatic focus adjustment even for a sample having regions with different heights is proposed. A charged particle beam device according to the disclosure includes: a sample holder configured to hold a sample; a sample stage configured to move the sample; a charged particle gun and a charged particle beam column configured to irradiate the sample with a charged particle beam; an objective lens configured to perform focus adjustment by changing an intensity of a focusing effect on the charged particle beam; a detector configured to detect electrons from the sample and output a signal forming an electron image; an optical imaging device configured to capture an optical image of the sample; and a control device configured to calculate height information of the sample based on the optical image obtained by imaging the sample by the optical imaging device, and automatically set a focus adjustment value of an observation site based on the height information (see FIG. 5).

A technique that enables automatic focus adjustment even for a sample having regions with different heights is proposed. A charged particle beam device according to the disclosure includes: a sample holder configured to hold a sample; a sample stage configured to move the sample; a charged particle gun and a charged particle beam column configured to irradiate the sample with a charged particle beam; an objective lens configured to perform focus adjustment by changing an intensity of a focusing effect on the charged particle beam; a detector configured to detect electrons from the sample and output a signal forming an electron image; an optical imaging device configured to capture an optical image of the sample; and a control device configured to calculate height information of the sample based on the optical image obtained by imaging the sample by the optical imaging device, and automatically set a focus adjustment value of an observation site based on the height information (see FIG. 5).

This charged particle beam device comprises: a charged particle beam source that generates charged particle beams; an objective lens in which coil current is inputted to focus the charged particle beams on a sample; a control unit that controls the coil current; a hysteresis characteristics storage unit that stores hysteresis characteristics information of the objective lens; a history information storage unit that stores history information relating to the coil current; and an estimating unit that estimates the magnetic field generated by the objective lens based on the coil current, the history information, and the hysteresis characteristic information, and has a magnetic field correction unit that, when the absolute value of the change amount of the coil current is greater than a prescribed value, further adds to the magnetic field estimated by the estimating unit a correction value according to the coil current and its change amount, correcting the magnetic field generated by the objective lens.