Using a segmented detector having detection regions enables an observation of atoms in a specimen with a high contrast. A scanning transmission electron microscope system 100 scans an electron beam EB over a specimen S, uses a segmented detector 105 having detection regions disposed in a bright-field area to detect electrons transmitted through and scattered from the specimen S for each detection region, generates segmented images based on results of detecting the electrons in the detection regions, and applies filters determined based on a signal-to-noise ratio to the segmented images to generate a reconstructed image. The signal-to-noise ratio is proportional to an absolute value of a total phase contrast transfer function normalized by a noise level, the total phase contrast transfer function being defined by product-sum operation of complex phase contrast transfer functions and weight coefficients for the detection regions. The filters are determined based on the weight coefficients that yield a maximum of the signal-to-noise ratio.

A reference image is generated based on an illumination condition and element information of a specimen. The reference image includes a figure indicating a characteristic X-ray generation range, a numerical value indicating a characteristic X-ray generation depth, or the like. The reference image changes with a change of an accelerating voltage, a tilt angle, or an element forming the specimen. The reference image may include a figure indicating a landing electron scattering range, a figure indicating a back-scattered electron generation range, or the like.

A method and a system are for sparse sampling utilizing a programmatically randomized signal for modulating a carrier signal. The system includes a compound sparse sampling pattern generator that generates at least one primary carrier signal, and at least one secondary signal. The at least one secondary signal modulates the at least one primary signal in a randomized fashion.

The purpose of the present invention is to provide a pattern measurement apparatus that appropriately assesses patterns formed by patterning methods for forming patterns that do not exist on photomasks. In order to achieve this purpose, the present invention provides a pattern measurement apparatus comprising a processor that measures the dimensions of patterns formed on a sample by using data acquired by irradiating the sample with a beam, wherein the processor extracts pattern coordinate information on the basis of the data acquired by irradiating the sample with a beam, and uses the coordinate information to generate measurement reference data used when performing dimension measurements of the pattern.

The purpose of the present invention is to provide a pattern measurement apparatus that appropriately assesses patterns formed by patterning methods for forming patterns that do not exist on photomasks. In order to achieve this purpose, the present invention provides a pattern measurement apparatus comprising a processor that measures the dimensions of patterns formed on a sample by using data acquired by irradiating the sample with a beam, wherein the processor extracts pattern coordinate information on the basis of the data acquired by irradiating the sample with a beam, and uses the coordinate information to generate measurement reference data used when performing dimension measurements of the pattern.

A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.

An apparatus for analyzing and/or processing a sample with a particle beam, comprising: a providing unit for providing the particle beam; a shielding element for shielding an electric field (E) generated by charges (Q) accumulated on the sample, wherein the shielding element has a through opening for the particle beam to pass through towards the sample; a detecting unit configured to detect an actual position of the shielding element; and an adjusting unit for adjusting the shielding element from the actual position into a target position.

The invention provides a sample observation system including a scanning electron microscope and a calculator. The calculator: (1) acquires a plurality of images captured by the scanning electron microscope; (2) acquires, from the plurality of images, a learning defect image including a defect portion and a learning reference image not including the defect portion; (3) calculates estimation processing parameters by using the learning defect image and the learning reference image; (4) acquires an inspection defect image including a defect portion; and (5) estimates a pseudo reference image by using the estimation processing parameters and the inspection defect image.

Disclosed herein are scientific instrument support systems, as well as related methods, computing devices, and computer-readable media. For example, in some embodiments, a method for determining sample location and associated stage coordinates by a microscope at least comprises acquiring, with a navigation camera, an image of a plurality of samples loaded on a fixture, the image being of low resolution at a field of view that includes the fixture and all samples of the plurality of samples, analyzing the image with a trained model to identify the plurality of samples, based on the analysis, associating each sample with a location on the fixture, based on the location on the fixture of each sample, associating separate stage coordinate information with each sample of the plurality of samples loaded on the fixture, and translating a stage holding the fixture to first stage coordinates based on the associated stage coordinate information of a first sample of the plurality of samples.

Methods and apparatuses are disclosed herein for parameter estimation for metrology. An example method at least includes optimizing, using a parameter estimation network, a parameter set to fit a feature in an image based on one or more models of the feature, the parameter set defining the one or more models, and providing metrology data of the feature in the image based on the optimized parameter set.