Provided is a charged particle beam device with low blanking noise and improved signal detection accuracy. As means therefor, a charged particle beam device is configured by: a stage where a sample is mountable; a charged particle gun performing charged particle emission to the sample; a voltage source; a first switching circuit to which a voltage is supplied from the voltage source; a second switching circuit having one end connected to a ground; a third switching circuit having one end connected to the ground; a fourth switching circuit to which a voltage is supplied from the voltage source; a first blanking electrode connected to the first switching circuit and the second switching circuit; a second blanking electrode facing the first blanking electrode and connected to the third switching circuit and the fourth switching circuit; and a control circuit controlling the first switching circuit, the second switching circuit, the third switching circuit, and the fourth switching circuit.

Provided is a charged particle beam device with low blanking noise and improved signal detection accuracy. As means therefor, a charged particle beam device is configured by: a stage where a sample is mountable; a charged particle gun performing charged particle emission to the sample; a voltage source; a first switching circuit to which a voltage is supplied from the voltage source; a second switching circuit having one end connected to a ground; a third switching circuit having one end connected to the ground; a fourth switching circuit to which a voltage is supplied from the voltage source; a first blanking electrode connected to the first switching circuit and the second switching circuit; a second blanking electrode facing the first blanking electrode and connected to the third switching circuit and the fourth switching circuit; and a control circuit controlling the first switching circuit, the second switching circuit, the third switching circuit, and the fourth switching circuit.

A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.

A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.

Apparatuses, methods, and systems for ultra-fast beam current adjustment for a charged-particle inspection system include an charged-particle source configured to emit charged particles for scanning a sample; and an emission booster configured to configured to irradiate electromagnetic radiation onto the charged-particle source for boosting charged-particle emission in a first cycle of a scanning operation of the charged-particle inspection system, and to stop irradiating the electromagnetic radiation in a second cycle of the scanning operation.

When a high-performance retarding voltage applying power supply cannot be employed in terms of costs or device miniaturization, it is difficult to sufficiently adjust focus in a high acceleration region within a range of changing an applied voltage, and identify a point at which a focus evaluation value is maximum. To address the above problems, a scanning electron microscope is provided including: an objective lens configured to converge an electron beam emitted from an electron source; a current source configured to supply an excitation current to the objective lens; a negative-voltage applying power supply configured to form a decelerating electric field of the electron beam on a sample; a detector configured to detect charged particles generated when the electron beam is emitted to the sample; and a control device configured to calculate a focus evaluation value from an image formed according to an output of the detector. The control device calculates a focus evaluation value when an applied voltage is changed, determines whether to increase or decrease an excitation current according to an increase or a decrease of the focus evaluation value, and supplies the excitation current based on a result of the determination.

Disclosed among other aspects is a power supply such as may be used in a charged particle inspection system. The power supply includes a direct current source such as a programmable linear current source connected to a controlled voltage source where the control signal for the controlled voltage source is derived from a measured voltage drop across the direct current source.

Disclosed among other aspects is a power supply such as may be used in a charged particle inspection system. The power supply includes a direct current source such as a programmable linear current source connected to a controlled voltage source where the control signal for the controlled voltage source is derived from a measured voltage drop across the direct current source.

A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.

Provided is a protective material ring in which a plurality of silicon members are joined. A protective material ring is to be installed in a treatment chamber of a substrate treatment apparatus performing plasma treatment on a substrate, and the substrate is accommodated in the treatment chamber. The protective material ring includes: three or more silicon members; and a joining part joining the silicon members. The joining part contains boron oxide.