An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material have two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.

An electron imaging apparatus 100 is disclosed, which is configured for an electron transfer along an electron-optical axis OA of an electron 2 emitting sample 1 to an energy analyzer apparatus 200, and comprises a sample-side first lens group 10, an analyzer-side second lens group 30 and a deflector device 20, configured to deflect the electrons 2 in an exit plane of the electron imaging apparatus 100 in a deflection direction perpendicular to the electron-optical axis OA. An electron spectrometer apparatus, an electron transfer method and an electron spectrometry method are also described.

The present invention provides apparatus for an imaging system comprising a multitude of chemical emitting elements upon a substrate. In some embodiments the substrate may be approximately round with a radius of approximately one inch. Various methods relating to using and producing an imaging system of chemical emitters are disclosed.

The present invention addresses the problem of providing a sample inspection device and a sample inspection method, whereby noise is removed from a detection signal, and a generated electron beam is utilized effectively for inspection. A sample inspection device according to the present invention is provided with a light source for emitting frequency-modulated light, a photocathode for emitting an electron beam in response to receiving the frequency-modulated light, a detector for detecting electrons emitted from a sample irradiated by the electron beam and generating a detection signal, and a signal extractor for extracting a signal having a frequency corresponding to a modulation frequency of the frequency-modulated light from within the detection signal.

The invention relates to a charged particle microscope (CPM) that at least includes a sample holder, for holding a sample, and a manipulator device arranged for transferring a lamella created in said sample out of said sample, wherein said manipulator device comprises a first elongated manipulator member with a first outer end, and a second elongated manipulator member with a second outer end. The outer ends are movable for mechanically gripping and releasing said lamella. In embodiments, the elongated manipulator members comprise off-set parts that increase manoeuvrability, accessibility, and monitorability of the manipulator device during use.

The invention relates to a charged particle microscope (CPM) that at least includes a sample holder, for holding a sample, and a manipulator device arranged for transferring a lamella created in said sample out of said sample, wherein said manipulator device comprises a first elongated manipulator member with a first outer end, and a second elongated manipulator member with a second outer end. The outer ends are movable for mechanically gripping and releasing said lamella. In embodiments, the elongated manipulator members comprise off-set parts that increase manoeuvrability, accessibility, and monitorability of the manipulator device during use.

Provided is a compact two-dimensional electron spectrometer that is capable of variably adjusting the deceleration ratio over a wide range, and performing simultaneous measurement of the two-dimensional emission angle distribution with a high energy resolution over a wide solid angle of acquisition. The two-dimensional electron spectrometer is configured from: a variable deceleration ratio spherical aberration correction electrostatic lens; a cylindrical mirror type energy analyzer or a wide angle energy analyzer; and a projection lens. The variable deceleration ratio spherical aberration correction electrostatic lens is configured from: an electrostatic lens that consists of an axially symmetric spherical mesh having a concave shape with respect to a point source, and one or a plurality of axially symmetrical electrodes, and that adjusts the spherical aberration of charged particles generated from the point source; and an axially symmetric deceleration field generating electrode that is placed coaxially with the electrostatic lens.

A secondary ion mass spectrometer comprising a primary ion beam device, and means for collecting, mass filtering and subsequently detecting secondary ions released from a sample due to the sample having been impacted by a plurality of primary ion beams. The secondary ion mass spectrometer is remarkable in that it uses a plurality of primary ion beams in parallel for scanning the surface of the sample.

In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.

Beam intercept profiles are measured as a particle beam transversely scans across a probe. A current of beam particles, a detector intensity, or image pixel intensities can variously be measured to obtain the profiles. Multiple profiles are used to determine geometric parameters which in turn can be used to configure equipment. In one application, transverse beam intercept profiles are measured for different waist heights of the particle beam. Steepness of the several profiles can be used to determine a height of the probe as the height at which the profile is steepest. The known probe height enables placing the probe in contact with a substrate at another known height. In another application, transverse beam intercept profiles of orthogonal probe edges are used to position a beam waist, reduce spot size, or reduce astigmatism. Techniques are applicable to SEM, FIB, and nanoprobe systems. Methods and apparatus are disclosed, with variations.