A secondary ion mass spectrometer comprising a primary ion beam device, and means for collecting, mass filtering and subsequently detecting secondary ions released from a sample due to the sample having been impacted by a plurality of primary ion beams. The secondary ion mass spectrometer is remarkable in that it uses a plurality of primary ion beams in parallel for scanning the surface of the sample.

Beam intercept profiles are measured as a particle beam transversely scans across a probe. A current of beam particles, a detector intensity, or image pixel intensities can variously be measured to obtain the profiles. Multiple profiles are used to determine geometric parameters which in turn can be used to configure equipment. In one application, transverse beam intercept profiles are measured for different waist heights of the particle beam. Steepness of the several profiles can be used to determine a height of the probe as the height at which the profile is steepest. The known probe height enables placing the probe in contact with a substrate at another known height. In another application, transverse beam intercept profiles of orthogonal probe edges are used to position a beam waist, reduce spot size, or reduce astigmatism. Techniques are applicable to SEM, FIB, and nanoprobe systems. Methods and apparatus are disclosed, with variations.

Beam intercept profiles are measured as a particle beam transversely scans across a probe. A current of beam particles, a detector intensity, or image pixel intensities can variously be measured to obtain the profiles. Multiple profiles are used to determine geometric parameters which in turn can be used to configure equipment. In one application, transverse beam intercept profiles are measured for different waist heights of the particle beam. Steepness of the several profiles can be used to determine a height of the probe as the height at which the profile is steepest. The known probe height enables placing the probe in contact with a substrate at another known height. In another application, transverse beam intercept profiles of orthogonal probe edges are used to position a beam waist, reduce spot size, or reduce astigmatism. Techniques are applicable to SEM, FIB, and nanoprobe systems. Methods and apparatus are disclosed, with variations.

An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material having two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.

An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material having two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.

Provided is an image type electron spin polarimeter. It at least comprises a scattering target, a two-dimensional electron detector and an electron bending unit, wherein the electron bending unit is used for bending the orbit of the incident (scattered) electrons to a first (second) angle to arrive the scattering target (two-dimensional electron detector) with an optimal incident angle, and to transfer the image of the electron intensities from the entrance plane (scattering target) to the scattering target (two-dimensional electron detector) with small aberrations, and to separate the orbits of incident and scattered electrons to increase the degree of freedom of the geometric configuration of each component of the spin polarimeter. At least one of the first and second angles is not 0°, thereby achieving the first transfer of the two-dimensional image of electron intensities on the entrance plane to the scattering target and the second transfer from scattering target to the two-dimensional electron detector respectively with small aberrations, and then achieving multichannel measurements of the electron spin.

Provided is an image type electron spin polarimeter. It at least comprises a scattering target, a two-dimensional electron detector and an electron bending unit, wherein the electron bending unit is used for bending the orbit of the incident (scattered) electrons to a first (second) angle to arrive the scattering target (two-dimensional electron detector) with an optimal incident angle, and to transfer the image of the electron intensities from the entrance plane (scattering target) to the scattering target (two-dimensional electron detector) with small aberrations, and to separate the orbits of incident and scattered electrons to increase the degree of freedom of the geometric configuration of each component of the spin polarimeter. At least one of the first and second angles is not 0°, thereby achieving the first transfer of the two-dimensional image of electron intensities on the entrance plane to the scattering target and the second transfer from scattering target to the two-dimensional electron detector respectively with small aberrations, and then achieving multichannel measurements of the electron spin.

Mineral definitions each include a list of elements, each of the elements having a corresponding standard spectrum. To determine the composition of an unknown mineral sample, the acquired spectrum of the sample is sequentially decomposed into the standard spectra of the elements from the element list of each of the mineral definitions, and a similarity metric computed for each mineral definition. The unknown mineral is identified as the mineral having the best similarity metric.

Mineral definitions each include a list of elements, each of the elements having a corresponding standard spectrum. To determine the composition of an unknown mineral sample, the acquired spectrum of the sample is sequentially decomposed into the standard spectra of the elements from the element list of each of the mineral definitions, and a similarity metric computed for each mineral definition. The unknown mineral is identified as the mineral having the best similarity metric.

An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material have two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.