Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

An electron microscope analysis system includes a detector that captures an electron microscope image formed on a detection plane by an electron beam that irradiates a specimen to be observed and transmits through the specimen. Electrons each having a de Broglie wave motion are integrated to be a linear rotor that is a collection of the electrons each having the de Broglie wave motion, so that each electron can be recognized, the principle of conservation of electric charge can be satisfied, and interaction with the specimen can be calculated. The electron is represented as a detection point on the detection plane, for comparison with actual measurement data when the number of electrons is small, to reduce damage of the specimen by the electron beam, and to obtain information of the specimen when an amount of irradiation is small.

Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

The invention is to simplify operations performed when imaging an electron diffraction pattern by using a transmission electron microscope. As a solution to the problem, a transmission electron microscope includes a detector to which an electron diffraction pattern is projected, a mask for zero-order wave configured to be inserted into and pulled out from between a sample and the detector, and a current detector configured to be inserted into and pulled out from a detection region of the zero-order waves in a state where the mask is inserted. An amount of current of electron beams emitted to the mask is measured in real time, and the measurement result is automatically reflected in settings of imaging conditions of an imaging camera provided in the transmission electron microscope.

This charged particle gun has a bolt to which a charged particle source is attached, a nut that is screwed together with the bolt and thereby holds the charged particle source, and a nut seat surface in contact with the nut. The nut includes an inclination adjustment section whereby it is possible to adjust the angle of inclination of the charged particle source with respect to the nut seat surface, and a lock section that inhibits the nut and the bolt from becoming loose when screwed together. The inner surface of the nut has a screw thread section and a non-screw thread section with a larger inner diameter than the screw thread section. The inclination adjustment section has: a first slit formed so as to pass through an area from one part of the outer surface of the nut to one part of the non-screw thread section; an inclination adjustment screw; a first part positioned between the first slit and a second surface; a second part positioned between the first slit and a first surface; and a first screw hole that is screwed together with the inclination adjustment screw and formed so as to pass through an area from the first surface to the first slit in the second part.

A method of, and a detector for, performing energy sensitive imaging of ionizing radiation are provided, including acquiring a first frame having a plurality of pixels, each pixel of the plurality having an energy of detection and a location; grouping, into a cluster, pixels of the plurality having an energy of detection above a predetermined threshold and a location along with at least one other pixel also having an energy of detection above the predetermined threshold and being within a predetermined distance of the location; summing the energy of detection of all pixels within the grouped cluster to determine a cluster energy; determining a location of the cluster based on a distribution and an intensity of the summed energy of detection; and generating an image of the cluster based on the determined cluster energy and the determined location of the cluster.

An automatic method is provided to align a semiconductor crystalline substrate for electron channeling contrast imaging (ECCI) in regions where an electron channeling pattern cannot be reliably obtained but crystalline defects need to be imaged. The automatic semiconductor crystalline substrate alignment method is more reproducible and faster than the current operator intensive process for ECCI alignment routines. Also, the automatic semiconductor crystalline substrate alignment method increases the throughput of ECCI.

The disclosure relates to a method for characterizing a two-dimensional nanomaterial sample. The two-dimensional nanomaterial sample is placed in a vacuum chamber. An electron beam passes through the two-dimensional nanomaterial sample to form a diffraction electron beam and a transmission electron beam to form an image on an imaging device. An angle θ between the diffraction electron beam and the transmission electron is obtained. A lattice period d of the two-dimensional nanomaterial sample is calculated according to a formula d sin θ≅dθ=λ, where λ represents a wavelength of the electron beam.