An electron beam source including a cathode, an anode, a means for deflecting an electron beam over a target surface and at least one vacuum pump, the electron beam source further including a contraction area arranged between the anode and the means for deflecting the electron beam where a hole in the contraction area is aligned with a hole in the anode with respect to the cathode, a first vacuum pump is arranged between the contraction area and the anode and a second vacuum pump is arranged above the anode, a gas inlet is provided between the contraction area and the means for deflecting the electron beam, wherein a first crossover of the electron beam is arranged between the cathode and the anode and a second crossover is arranged at or in close proximity to the contraction area.

An electron beam source including a cathode, an anode, a means for deflecting an electron beam over a target surface and at least one vacuum pump, the electron beam source further including a contraction area arranged between the anode and the means for deflecting the electron beam where a hole in the contraction area is aligned with a hole in the anode with respect to the cathode, a first vacuum pump is arranged between the contraction area and the anode and a second vacuum pump is arranged above the anode, a gas inlet is provided between the contraction area and the means for deflecting the electron beam, wherein a first crossover of the electron beam is arranged between the cathode and the anode and a second crossover is arranged at or in close proximity to the contraction area.

In an embodiment, a system is provided that includes an electron gun, a focusing system, and a housing. The electron gun can include a cold cathode electron source and an extraction electrode. The focusing system can be configured to focus a beam of electrons extracted from the electron gun to a focal region. The housing can include the electron gun and extend along a housing axis in the direction of the electron beam. The cold cathode source is configured to emit electrons at a first operating pressure that is higher than a second operating pressure at the focal region of the electron beam.

A differential pumping apparatus for creating a high vacuum inside a processing space includes a displacement drive unit configured to move a substrate to be processed or a head, to adjust parallelism and distance between a surface to be processed and a surface of the head. Gap measurement devices are placed at three or more locations along the periphery of the surface of the head to provide distance information. A gap control unit is configured to control the displacement drive unit in response to the distance information between the surface to be processed and the surface adapted to face the surface to be processed, so that the surface to be processed and the surface adapted to face the surface to be processed are parallel.

A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.

A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.

The present invention relates to a multi-stage vacuum equipment, preferably a two-stage equipment, whose normal operation requires different pressures to be set, wherein the pressure variation may be achieved by a Shape Memory Alloy (SMA) wire movement of a suitable element. The invention further discloses a method for operating said multi-stage vacuum equipment controlled by a SMA actuator.

An electron beam 3D printing machine, comprising a chamber for generating and accelerating an electron beam and an operating chamber in which a metal powder is melted, with the consequent production of a three-dimensional product. The chamber for generating and accelerating an electron beam houses means for generating an electron beam and means for accelerating the generated electron beam, while the operating chamber houses at least one platform for depositing the metal powder, metal powder handling means and electron beam deflection means. The accelerator means for the generated electron beam comprise a series of resonant cavities fed with an alternating signal.

An electron beam 3D printing machine, comprising a chamber for generating and accelerating an electron beam and an operating chamber in which a metal powder is melted, with the consequent production of a three-dimensional product. The chamber for generating and accelerating an electron beam houses means for generating an electron beam and means for accelerating the generated electron beam, while the operating chamber houses at least one platform for depositing the metal powder, metal powder handling means and electron beam deflection means. The accelerator means for the generated electron beam comprise a series of resonant cavities fed with an alternating signal.

A fractioning device for an ion implantation device with at least one fractioning wall, wherein the fractioning device is suitable for being inserted within a channel. The channel is configured to connect an ion source, which is at a first pressure p1 and a processing chamber, which is at a second pressure p2 in an ion implantation device.