Bias supplies, plasma processing systems, and associated methods are disclosed. One bias supply comprises a bidirectional switch configured to enable bidirectional control of current. A controller is configured to control a direction of current through the bidirectional switch over a full current cycle, the full current cycle comprising a first half current cycle and a second half current cycle, the first half current cycle comprising positive current flow, starting from zero current that increases to a positive peak value and then decreases back to zero. The second half current cycle comprises negative current flow, starting from zero current that increases to a negative peak value and then decreases back to zero current to cause an application of the periodic voltage between the output node and the return node.

The present invention provides a sensor mounted wafer, including: a lower case in which a mounting groove is formed; a circuit board on which a plurality of electronic components having different heights are mounted, and placed in the mounting groove; an upper case in which a plurality of insertion grooves having different depths are formed, and bonded together to the lower case so that the plurality of electronic components are inserted into the plurality of insertion grooves; and an adhesive layer placed between the mounting groove and the plurality of insertion grooves, in which the insertion grooves are formed to have different depths according to the heights of the plurality of the electronic components.

Methods for etching a semiconductor structure and for conditioning a processing reactor in which a single semiconductor structure is treated are disclosed. An engineered polycrystalline silicon surface layer is deposited on a susceptor which supports the semiconductor structure. The polycrystalline silicon surface layer may be engineered by controlling the temperature at which the layer is deposited, by grooving the polycrystalline silicon surface layer or by controlling the thickness of the polycrystalline silicon surface layer.

A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

A radio frequency (RF) power generation system includes a RF power source that generates a RF output signal delivered to a load. A RF power controller is configured to generate a control signal to vary the RF output signal. The controller adjusts a parameter associated with the RF output signal, and the parameter is controlled in accordance with a trigger signal. The parameter is adjusted in accordance with a cost function, and the cost function is determined by intruding a perturbation into an actuator that affects the cost function. The actuator may control an external RF output signal, and the trigger signal may vary in accordance with the external RF output signal.

Plasma applications are disclosed that operate with argon and other molecular gases at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species. The plasma apparatus and the enclosure that contains the plasma apparatus and the substrate are substantially free of particles, so that the substrate does not become contaminated with particles during processing. The plasma is developed through capacitive discharge without streamers or micro-arcs. The techniques can be employed to remove organic materials from a substrate, thereby cleaning the substrate; to activate the surfaces of materials, thereby enhancing bonding between the material and a second material; to etch thin films of materials from a substrate; and to deposit thin films and coatings onto a substrate; all of which processes are carried out without contaminating the surface of the substrate with substantial numbers of particles.

The present invention relates to a device for generating a dielectric barrier discharge for treatment of an object (1) to be activated with non-thermal atmospheric pressure plasma, comprising a dielectric working chamber (2) which has a wall (3) of a dielectric material and which encloses a working space (4), wherein a metallization (6) is applied to an outer side (5) of the wall (3) facing away from the working space (4), wherein the working space (4) is an open volume, and a high-voltage source (9) which is configured to apply a high voltage to the metallization (6) or to the object (1) to be activated when the object (1) to be activated is in the working space (4). According to a further aspect, the invention relates to a method of treatment of an object (1) to be activated with a non-thermal atmospheric pressure plasma.

An apparatus to decouple RF signals from input signal conductors of a process chamber includes at least a first switch to decouple an energy storage element from an active element within a process station. In particular embodiments, while the first switch is in an opened position, a second switch located between a current generator and energy storage element is closed, thereby permitting the current generator to charge the energy storage element. In response to the energy storage element attaining a predetermined voltage, the first switch may be closed, and the second switch may be opened, thereby permitting current to be discharged from the energy storage element to the active element. In certain embodiments, the first and second switches are not permitted to simultaneously operate in a closed position, thereby preventing RF from being coupled from the process station to the current generator.

A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.

The present inventive concept relates to a substrate processing device and a substrate processing method. The substrate processing device comprises: a chamber; a substrate support part rotatably installed in a process space inside the chamber so as to allow at least one substrate to be seated thereon; a first gas spray unit for spraying, to a first region of the process space, a source gas and a first purge gas for purging the source gas; a source gas supply source for supplying the source gas to the first gas spray unit; a first purge gas supply source for supplying the first purge gas to the first gas spray unit; a second gas spray unit spatially separated from the first region and configured to spray, to a second region of the process space, a reactant gas reacting with the source gas and a second purge gas for purging the reactant gas; a reactant gas supply source for supplying the reactant gas to the second gas spray unit; and a second purge gas supply source for supplying the second purge gas to the second gas spray unit.