In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H.sub.2O and can provide at least about 30 cfm of air.

A processing system including an ion source having a plasma chamber to house a plasma, an extraction assembly, disposed along a side of the plasma chamber, and including at least one extraction aperture, and an antenna assembly extending through the plasma chamber. The antenna assembly may include a dielectric enclosure and a plurality of conductive antennas extending through the dielectric enclosure, the conductive antennas having respective gas ports formed therein for delivering a gas into the dielectric enclosure. The processing system may further include a temperature regulation system coupled to the conductive antennas and to the dielectric enclosure for monitoring a temperature of the dielectric enclosure and regulating the gas delivered to the conductive antennas for regulating the temperature of the dielectric enclosure.

Embodiments of the present disclosure provide a semiconductor processing apparatus and a dielectric window cleaning method of the semiconductor processing apparatus. The semiconductor apparatus includes a reaction chamber and a dielectric window arranged in the reaction chamber, an induction coil and a cleaning electrode, both located above the dielectric window, a radio frequency (RF) source assembly configured to apply RF power to the induction coil and the cleaning electrode, an impedance adjustment assembly electrically being connected to the cleaning electrode and being in an on-off connection to the output terminal of the RF source assembly, and the impedance adjustment assembly being configured to adjust the impedance between the output terminal of the RF source assembly and the cleaning electrode to cause the impedance to be greater than or smaller than the first predetermined value to disconnect or connect the impedance adjustment assembly and the output terminal of the RF source assembly. The semiconductor processing apparatus and the dielectric window cleaning method of the semiconductor processing apparatus of embodiments of the present disclosure can achieve a physical cleaning effect and a chemical cleaning effect at simultaneously on a basis of performing cleaning on the dielectric window. Thus, the cleaning efficiency of the dielectric window is effectively improved.

A method for temperature control includes: acquiring the present temperature of a reaction window in a process chamber of a semiconductor machine; comparing the present temperature with the preset temperature to acquire a comparison result; and adjusting the exhaust amount of an exhaust passage of the process chamber based on the comparison result to control the temperature of the reaction window.

A lid assembly for a processing chamber in a substrate processing system includes a dielectric window. The dielectric window includes an upper portion having flat upper and lower surfaces. The lower surface is a plasma-facing surface of the dielectric window. A lower portion of the dielectric window is cylindrical and extends downward from the lower surface and an outer diameter of the lower portion at least one of is aligned with a gap between inner and outer coils arranged above the dielectric window and overlaps one of the inner and outer coils.

A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.

A plenum, positioned beneath a first coil and above a window disposed on a top portion of a processing chamber, has side walls and a top surface covering an upper surface of the window and has a first air inlet positioned at a center portion to receive airflow from a first air amplifier. The first air inlet includes holes to distribute the air across the window within the side walls to reduce hotspots at a center portion of the window. The plenum includes a second air inlet at an edge portion of the top surface to receive the airflow from a second air amplifier to reduce hotspots at an edge portion of the window, and a third air inlet between the center and edge portions of the top surface to receive the airflow from a third air amplifier to reduce hotspots at a middle portion of the window.

Cooling plates for radio-frequency transmissive windows in semiconductor processing chambers are disclosed. The cooling plates feature one or more sets of walls that, for each set, define a plurality of serpentine channels that are arranged in a circular array, thereby providing an annular region having serpentine channels extending therethrough. The cooling plate may be placed adjacent to the window and fluid may be flowed through it to provide cooling to the window. The cooling plates disclosed may require a much lower amount of total volumetric flow in order to achieve comparable or superior performance compared with traditional window cooling systems using air multipliers or air amplifiers.

A plenum for a dielectric window of a substrate processing system includes a first inlet port, a second inlet port, and a body. The body includes: a first recessed area configured to hold a first coil; a second recessed area configured to hold a second coil; a third recessed area configured to oppose a first area of the dielectric window, receive a first coolant from the first inlet port, and direct the first coolant across the first area to cool a first portion of the dielectric window; and a fourth recessed area configured to oppose a second area of the dielectric window, receive a second coolant from the second inlet port, and direct the second coolant across the second area to cool a second portion of the dielectric window.

The inventive concept provides an antenna member. In an embodiment, the antenna member includes a first coil and a second coil which have a rotational symmetry to each other, and wherein the first coil includes a first supply terminal applied with a current and a first ground terminal connected to the ground, the second coil includes a second supply terminal applied with the current and a second ground terminal connected to the ground, and wherein the first coil and the second coil each include a first portion having an arc-shape and a second portion having an arc-shape which as a whole form one winding, and when seen from a side, the second portion has a relatively lower height than the first portion, and the second portion of the second coil is positioned below the first portion of the first coil, and the second portion of the first coil is positioned below the first portion of the second coil.