A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.

To provide an electronic component having a protective film formed with good uniformity, over the entire surface thereof. The electronic component has a protective film formed over the entire surface thereof, and the electronic component has elements and wirings formed on a base body. The protective film is formed by a CVD method, over an entire surface of the electronic component, by: arranging an electrode in a chamber; grounding one side of the chamber and the electrode; accommodating the electronic component in the chamber; supplying a raw material gas to the chamber; rotating or swinging the chamber and thereby moving the electronic component in the chamber; supplying high-frequency power to the other side of the chamber and the electrode; and generating a raw-material-gas-based plasma between the electrode and the chamber.

A method of discriminating a state of a sputtering apparatus in which, by sputtering a target (2), a film is formed on a substrate disposed to lie opposite to the target, the discrimination being made, prior to the film formation on the substrate, as to whether an atmosphere in the vacuum chamber is in a state fit for film formation. As the sputtering apparatus, use is made of one provided inside the vacuum chamber with an isolated space which is isolated from the vacuum chamber by an isolating means (6, 71˜73), the isolated space being for the target and the substrate to lie therein opposite to each other, the sputtering apparatus being so arranged that the isolated space is evacuated accompanied by the evacuation in the vacuum chamber. The vacuum chamber is evacuated to a predetermined set pressure and a gas is introduced therein in this state.

Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.

In one embodiment, a semiconductor manufacturing apparatus includes a housing configured to house a substrate, and a first temperature regulator configured to regulate a temperature of a fluid. The apparatus further includes first and second flow channels configured to divide the fluid supplied from the first temperature regulator, and a second temperature regulator configured to regulate a temperature of the fluid in the second channel. The apparatus further includes a fluid supply channel configured to join the fluid in the first flow channel and the fluid in the second flow channel and to supply the joined fluids to the housing, and a flow rate regulator configured to regulate a flow rate of the fluid in the first flow channel and a flow rate of the fluid in the second flow channel.

A cooling device includes a circulation system configured to circulate a refrigerant in a condenser so as to return the refrigerant to the condenser via a pump, a heater, a throttle valve, and a vaporizer; and a cooling system that includes a heat exchanger arranged in the condenser. The condenser includes a first portion where the refrigerant is present in a liquid state and a second portion where the refrigerant is present in a gas state, and at least a portion of the heat exchanger is arranged in the second portion.

An adjustment method for filter units in a plasma processing apparatus includes a first measurement process of measuring a frequency characteristic of a reference filter unit selected among the filter units, and an adjustment process of adjusting a frequency characteristic of each of remaining filter units selected among the filter units excluding the reference filter unit. Further, the adjustment process includes an attachment process of attaching a capacitive member for adjusting a capacitance between wirings in each of the remaining filter units, a second measurement process of measuring a frequency characteristic of each of the remaining filter units to which the capacitive member is attached, and an individual adjustment process of adjusting a capacitance of the capacitive member such that the frequency characteristic of each of the remaining filter unit to which the capacitive member is attached becomes close to the frequency characteristic of the reference filter unit.

An etching method comprises (a) providing a substrate in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film; and (b) etching the silicon-containing film, including (b-1) etching the silicon-containing film using plasma generated from a first process gas, the first process gas containing a hydrogen fluoride gas and a reaction control gas to control a reaction between hydrogen fluoride and the silicon-containing film, the first process gas containing, as the reaction control gas, at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction, and (b-2) etching the silicon-containing film using plasma generated from a second process gas, the second process gas containing a hydrogen fluoride gas, and containing at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction.

A method of generating power with a power generation system. Solid state generators generate a plurality of outputs. The outputs of the solid state generator modules are combined from a plurality of channels, in a combiner, using a phase optimization technique to generate an in phase combined output power.

A substrate processing system for processing a substrate includes an upper plasma exclusion zone ring arranged above a substrate during plasma treatment of a bevel edge of the substrate. An upper electrode is arranged above the substrate during plasma treatment. A lower plasma exclusion zone ring is at least partially arranged below the substrate during the plasma treatment. A lower electrode is at least partially arranged below the substrate during plasma treatment. The lower plasma exclusion zone ring includes an annular body with a lower portion at least partially arranged below the substrate and an upwardly projecting flange extending upwardly from the lower portion of the annular body at a location spaced from a radially outer edge of the substrate. The upwardly projecting flange includes an uppermost surface extending to one of a middle portion of the substrate in a vertical direction and above the middle portion of the substrate.