An electron multiplier is positioned relative to at least one dynode to direct a beam of secondary particles from the at least one dynode to a collector area of the electron multiplier and not to a channel area of the electron multiplier for a range of electron multiplier voltages applied by one or more voltage sources to the electron multiplier and for a dynode voltage applied by the one or more voltage sources to the at least one dynode. The electron multiplier includes an aperture with an entrance cone and walls of the entrance cone comprise the collector area and an apex of the entrance cone comprises the channel area. An electron multiplier voltage of the range of electron multiplier voltages is applied to the electron multiplier and the dynode voltage is applied to the at least one dynode using the one or more voltage sources.

The present invention relates to an imaging device that includes a gating element which receives incident photons and releases pulsed electrons; a single microchannel-plate (MCP) which receives the pulsed electrons and amplifies the pulsed electrons as an amplified pulsed electron flux; a collection element which receives the amplified pulsed electron flux; a high-pass filter; and a gated integrator; wherein the high-pass filter element receives the amplified pulsed electron flux from the collection element and alternate current (AC) couples the amplified pulsed electron flux as a charge pulse to the gated integrator; and wherein the gating element and the gated integrator are time-synchronized to allow charge-integration only while the AC-coupled charge pulse is unipolar. A feedback loop can provide an auto-gating function. The imaging device can be used in night vision goggles or a mass spectrometer.

An ion detector includes a microchannel plate configured to generate secondary electrons upon reception of ions incident thereon and multiply and output the generated secondary electrons; a plurality of electron impact-type diodes configured to have effective regions narrower than an effective region of the microchannel plate on an electron incident surface facing the microchannel plate side, receive the incident secondary electrons output from the microchannel plate, and multiply and detect the incident secondary electrons; and a focus electrode configured to be disposed between the microchannel plate and the electron impact-type diodes and focus the secondary electrons toward the electron impact-type diode.

An ion detection system is disclosed that comprises one or more first devices 11 configured to produce secondary electrons in response to incident ions. The one or more first devices 11 comprise a first ion collection region and a second ion collection region and are configured to produce first secondary electrons in response to one or more ions incident at the first ion collection region and to produce second secondary electrons in response to one or more ions incident at the second ion collection region. The ion detection system also comprises a first output device 14 configured to output a first signal in response to first secondary electrons produced by the one or more first devices 11 and a second output device 15 configured to output a second signal in response to second secondary electrons produced by the one or more first devices 11.

In an electron tube, the meta-surface emits an electron in response to an incidence of the electromagnetic wave. The first and second electrodes are spaced away from each other, and apply potentials different from each other to the meta-surface. A holder is disposed in the housing and holds the electron emitter. A first conductive line of the meta-surface is electrically connected to the first electrode. A second conductive line of the meta-surface is spaced away from the first conductive line, and is electrically connected to the second electrode. The first conductive line extends from the first electrode to the second conductive line. The second conductive line extends from the second electrode to the first conductive line.

A photocathode including a substrate, a photoelectric conversion layer provided on the substrate and generating photoelectrons in response to incidence of light, and an underlayer provided between the substrate and the photoelectric conversion layer and containing beryllium, in which the underlayer has a first underlayer containing a nitride of beryllium.

A photocathode including a substrate, a photoelectric conversion layer provided on the substrate and generating photoelectrons in response to incidence of light, and an underlayer provided between the substrate and the photoelectric conversion layer and containing beryllium, in which the underlayer has a first underlayer containing a nitride of beryllium.

An ion detector includes a microchannel plate configured to generate secondary electrons upon reception of ions incident thereon and multiply and output the generated secondary electrons; a plurality of electron impact-type diodes configured to have effective regions narrower than an effective region of the microchannel plate on an electron incident surface facing the microchannel plate side, receive the incident secondary electrons output from the microchannel plate, and multiply and detect the incident secondary electrons; and a focus electrode configured to be disposed between the microchannel plate and the electron impact-type diodes and focus the secondary electrons toward the electron impact-type diode.

A system and method for improved atomic layer deposition. The system includes a top showerhead plate, a substrate and a bottom showerhead plate. The substrate includes a porous microchannel plate and a substrate holder is positioned in the system to insure flow-through of the gas precursor.

A secondary electron emissive layer resistant to infiltration and fouling. A barrier layer is formed by atomic layer deposition. The barrier layer may be an emissive layer and/or an interlayer. The barrier layer may form an interlayer that is a part of an electron amplifier positioned between an emissive layer and a resistive layer. The barrier layer is resistive to fluorine migration from either the emissive layer or the resistive layer.