Patent classifications
H01J49/126
SYSTEMS AND APPROACHES FOR SEMICONDUCTOR METROLOGY AND SURFACE ANALYSIS USING SECONDARY ION MASS SPECTROMETRY
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
Apparatus and method for thermal assisted desorption ionization systems
The present invention is directed to a method and device to desorb an analyte using heat to allow desorption of the analyte molecules, where the desorbed analyte molecules are ionized with ambient temperature ionizing species. In various embodiments of the invention a current is passed through a mesh upon which the analyte molecules are present. The current heats the mesh and results in desorption of the analyte molecules which then interact with gas phase metastable neutral molecules or atoms to form analyte ions characteristic of the analyte molecules.
Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
SYSTEMS AND APPROACHES FOR SEMICONDUCTOR METROLOGY AND SURFACE ANALYSIS USING SECONDARY ION MASS SPECTROMETRY
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
SYSTEMS AND APPROACHES FOR SEMICONDUCTOR METROLOGY AND SURFACE ANALYSIS USING SECONDARY ION MASS SPECTROMETRY
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
Glow discharge system and glow discharge mass spectroscope using the same
There is provided a glow discharge mass spectroscope having a higher analytical sensitivity by increasing an amount of extracted ion beams without a significant change in device construction and drive conditions of conventional glow discharge systems. When glow discharge is generated in a discharge region 27, an amount of ion beams extracted by a magnetic field formed by a first magnet 15 and a second magnet 26 is increased by disposing the circular and flat plate-shaped first magnet 15 between a flat plate-shaped solid sample 30 and a plunger 16 for holding the solid sample 30, disposing the ring-shaped second magnet 26 disposed coaxially with the first magnet 15 so as to surround a discharge region 27 at an ion extraction port side of a cell body 21 that forms the discharge region 27, and disposing the first magnet 15 and the second magnet 26 so that magnetization directions are parallel to each other in a direction toward the ion extraction port from the opening and magnetic poles are opposite to each other.
GLOW DISCHARGE SYSTEM AND GLOW DISCHARGE MASS SPECTROSCOPE USING THE SAME
There is provided a glow discharge mass spectroscope having a higher analytical sensitivity by increasing an amount of extracted ion beams without a significant change in device construction and drive conditions of conventional glow discharge systems. When glow discharge is generated in a discharge region 27, an amount of ion beams extracted by a magnetic field formed by a first magnet 15 and a second magnet 26 is increased by disposing the circular and flat plate-shaped first magnet 15 between a flat plate-shaped solid sample 30 and a plunger 16 for holding the solid sample 30, disposing the ring-shaped second magnet 26 disposed coaxially with the first magnet 15 so as to surround a discharge region 27 at an ion extraction port side of a cell body 21 that forms the discharge region 27, and disposing the first magnet 15 and the second magnet 26 so that magnetization directions are parallel to each other in a direction toward the ion extraction port from the opening and magnetic poles are opposite to each other.
Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
APPARATUS AND METHOD FOR THERMAL ASSISTED DESORPTION IONIZATION SYSTEMS
The present invention is directed to a method and device to desorb an analyte using heat to allow desorption of the analyte molecules, where the desorbed analyte molecules are ionized with ambient temperature ionizing species. In various embodiments of the invention a current is passed through a mesh upon which the analyte molecules are present. The current heats the mesh and results in desorption of the analyte molecules which then interact with gas phase metastable neutral molecules or atoms to form analyte ions characteristic of the analyte molecules.
Apparatus and method for thermal assisted desorption ionization systems
The present invention is directed to a method and device to desorb an analyte using heat to allow desorption of the analyte molecules, where the desorbed analyte molecules are ionized with ambient temperature ionizing species. In various embodiments of the invention a current is passed through a mesh upon which the analyte molecules are present. The current heats the mesh and results in desorption of the analyte molecules which then interact with gas phase metastable neutral molecules or atoms to form analyte ions characteristic of the analyte molecules.