An ultraviolet lamp includes a lamp tube and an electrode. A discharge cavity is formed in the lamp tube. A thermistor is disposed on an end socket at a first end of the lamp tube. A receiving groove communicated with the discharge cavity is formed in the end socket and contains amalgam. The thermistor heats the amalgam in the receiving groove in the end socket. The Curie temperature of the thermistor ranges from [T1+(T2−T1)/5] to [T1+4*(T2−T1)/5], wherein T1 and T2 are respectively a minimum operating temperature and a maximum operating temperature of the amalgam in a continuous region where the ultraviolet radiation power is from 90% to 100% when the input power of the ultraviolet lamp is 100%.

An ultraviolet lamp includes a lamp tube and an electrode. A discharge cavity is formed in the lamp tube. A thermistor is disposed on an end socket at a first end of the lamp tube. A receiving groove communicated with the discharge cavity is formed in the end socket and contains amalgam. The thermistor heats the amalgam in the receiving groove in the end socket. The Curie temperature of the thermistor ranges from [T1+(T2−T1)/5] to [T1+4*(T2−T1)/5], wherein T1 and T2 are respectively a minimum operating temperature and a maximum operating temperature of the amalgam in a continuous region where the ultraviolet radiation power is from 90% to 100% when the input power of the ultraviolet lamp is 100%.

At least one of the electrodes of a discharge lamp, including at an interior of a main body of the electrode: a heat-transmitting substance of the melting point lower than that of a material which makes up the main body; and a regulating body that is made up of a material of the melting point higher than that of the heat-transmitting substance, that includes a blade which extends in the axial direction and in a radial direction perpendicular to the axial direction, and that regulates convection of the heat-transmitting substance. Surface roughness Rz of at least one of a region which is on an inner wall face of the main body and with which the regulating body makes contact and a region which is on a surface of the regulating body and with which the inner wall face makes contact is not greater than 1.52 μm.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

An ultraviolet lamp includes a lamp tube and an electrode. A discharge cavity is formed in the lamp tube. A thermistor is disposed on an end socket at a first end of the lamp tube. A receiving groove communicated with the discharge cavity is formed in the end socket and contains amalgam. The thermistor heats the amalgam in the receiving groove in the end socket. The Curie temperature of the thermistor ranges from [T1+(T2−T1)/5] to [T1+4*(T2−T1)/5], wherein T1 and T2 are respectively a minimum operating temperature and a maximum operating temperature of the amalgam in a continuous region where the ultraviolet radiation power is from 90% to 100% when the input power of the ultraviolet lamp is 100%.

An ultraviolet lamp includes a lamp tube and an electrode. A discharge cavity is formed in the lamp tube. A thermistor is disposed on an end socket at a first end of the lamp tube. A receiving groove communicated with the discharge cavity is formed in the end socket and contains amalgam. The thermistor heats the amalgam in the receiving groove in the end socket. The Curie temperature of the thermistor ranges from [T1+(T2−T1)/5] to [T1+4*(T2−T1)/5], wherein T1 and T2 are respectively a minimum operating temperature and a maximum operating temperature of the amalgam in a continuous region where the ultraviolet radiation power is from 90% to 100% when the input power of the ultraviolet lamp is 100%.

The subject of the invention is a method and device for reducing contamination in a plasma reactor, especially contamination by lubricants, particularly for plasma processing of materials. The method is based on the fact that the contaminated gas pumped out of at least one reduced pressure vacuum chamber in the form of a plasma lamp (LA.sub.1, LA.sub.2, LA.sub.3) is purified in at least one purifying plasma lamp (LA.sub.01, LA.sub.02, LA.sub.H, LA.sub.E), in which a glow discharge is initiated between the anodes of the purifying plasma lamp (A01, A02) and the cathodes of the purifying plasma lamp (K.sub.01, K.sub.02), favorably particles of lubricants are cracked and partially polymerized, while processed heavy particles of lubricants are collected in a buffer tank (ZB) and then discharged outside the pumping system. The device contains at least one reduced pressure vacuum chamber in the form of a plasma lamp (LA.sub.1, LA.sub.2, LA.sub.3), it is connected to at least one purifying plasma lamp (LA.sub.01, LA.sub.02, LA.sub.H, LA.sub.E) with a buffer tank (ZB) connected to a vacuum pump (PP). The vacuum tube connecting the plasma lamps (LA.sub.1, LA.sub.2, LA.sub.3) with the purifying plasma lamp (LA.sub.01, LA.sub.02, LA.sub.H, LA.sub.E)) is equipped with a dosing valve (V) for the gaseous admixture medium (MD) to plasma lamps (LA.sub.1, LA.sub.2, LA.sub.3), from which radiation (R.sub.1, R.sub.2, R.sub.3) is directed to the processed material (OM).

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A gas discharge lamp and photoionization sensor employing the gas discharge lamp. The lamp includes a housing containing a working gas sealed within the housing and a primary ultra-violet transparent window through a first longitudinal end of the housing. In a first embodiment the lamp includes an arched band of elastic getter material band with longitudinally extending diametrically opposed legs wedged within the chamber defined by the housing. In a second embodiment the lamp includes a second ultra-violet transparent window within the housing held into positon against the primary ultra-violet transparent window by an arched metal support band within the housing.

Getter devices with improved sorption rate based on powders of ternary alloys particularly suitable for hydrogen and carbon monoxide sorption are described, said alloys having a composition comprising zirconium, vanadium and aluminum as main constituent elements.