Patent classifications
H01J9/025
METHOD FOR MANUFACTURING A TRENCH CHANNEL FOR A VACUUM TRANSISTOR DEVICE AND VACUUM TRANSISTOR DEVICE
A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.
ELECTRON EMITTING DEVICE USING GRAPHITE ADHESIVE MATERIAL AND MANUFACTURING METHOD FOR THE SAME
The present disclosure relates to a manufacturing method for an electron emitting device using a graphite adhesive material. A method of preparing paste for forming a cathode of an electron emitting device includes: mixing and dispersing a nanomaterial for electron emission and a graphite filler in a solvent; drying a mixed solution in which the nanomaterial and the graphite filler are mixed; and preparing paste by mixing a graphite binder with the dried mixture.
Charged Particle Source and Charged Particle Beam Device
A charged particle source is provided that exhibits small energy dispersion for charged particle beams emitted under a high angular current density condition and allows stable acquisition of large charged particle currents even for a small light source diameter. The charged particle source has a spherical virtual cathode surface from which charged particles are emitted, and the virtual cathode surface for charged particles emitted from a first position on a tip end surface of an emitter and the virtual cathode surface for charged particles emitted from a second position on the tip end surface of the emitter match each other.
ELECTRON SOURCE BASED ON FIELD EMISSION AND PRODUCTION PROCESS FOR SAME
The invention relates to an electron source comprising a conductive substrate, a conductor disposed facing the substrate, the electron source emitting an electron beam when the conductor is positively biased with respect to the substrate, and an electrically insulating crystal arranged on the substrate, facing the conductor, the substrate defining with the crystal a void including at least one peak located at a distance from the crystal, the crystal having, in a plane parallel to the substrate, dimensions of less than 100 nm and a thickness of less than 50 nm.
PASSIVE AND ACTIVE DIAMOND-BASED ELECTRON EMITTERS AND IONIZERS
A triple-point cathode coating and method wherein electrically conductive NEA diamond particles cast or mixed with the adhesive medium and electrically insulative NEA diamond particles are cast or mixed with the adhesive medium to form a plurality of exposed junctions between electrically conductive diamond particles and electrically insulative diamond particles to reduce any electrical charges on a structure coated with the coating.
Carbon nanotube field emitter and preparation method thereof
A carbon nanotube field emitter comprises at least two electrodes and at least one graphitized carbon nanotube structure. The at least one graphitized carbon nanotube structure comprises a first end and a field emission end. The first end is opposite to the field emission end. The first end is fixed between the at least two electrodes, and the field emission end is exposed from the at least two electrodes and configured to emit electrons.
Electron Source, Electron Beam Device, and Method for Manufacturing Electron Source
In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion (40) configured to emit an electron when an electric field is generated; a shank (41) that supports the protrusion (40) and has a diameter decreasing toward the protrusion (40); and a body (42) that supports the shank (41), in which the protrusion (40), the shank (41), and the body (42) are each made of a hexaboride single crystal, and a part including the shank (41) and the body (42) excluding the protrusion (40) is covered with a material having a work function higher than that of the hexaboride single crystal.
EMITTER, ELECTRON GUN IN WHICH SAME IS USED, ELECTRONIC DEVICE IN WHICH SAME IS USED, AND METHOD FOR MANUFACTURING SAME
The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.
CARBON NANOTUBE (CNT) PASTE EMITTER, METHOD OF MANUFACTURING THE SAME, AND X-RAY TUBE APPARATUS USING THE SAME
A method of manufacturing a CNT paste emitter in accordance with an exemplary embodiment of the present disclosure includes a process of mixing first CNT powder, graphite nanoparticles, SiC nanoparticles, Ni nanoparticles, a dispersant and distilled water and then performing a dispersion process by means of ultrasonication, a process of acquiring second CNT powder by filtering a solution dispersed during the dispersion process, a process of mixing the second CNT powder with a graphite binder and then preparing a CNT paste by means of ball milling, and a process of forming an interface layer on a metal or graphite substrate and then bonding the CNT paste.
Carbon-metal structure and method for manufacturing carbon-metal structure
It is a CNT device (1) (carbon-metal structure) equipped with a carbon nanotube layer (2) (CNT layer 2; same hereafter) on a metal pedestal (4). The metal pedestal (4) is brazed to the CNT layer (2) with a brazing material layer (3) interposed therebetween. When manufacturing the CNT device (1), firstly, the CNT layer (2) is formed on a heat-resistant textured substrate (6). Next, the metal pedestal (4) is brazed to the CNT layer (2) that is on the heat-resistant textured substrate (6) with the brazing material layer (3) interposed therebetween. Then, the metal pedestal (4) (and the CNT layer 2) is peeled off the heat-resistant textured substrate (6) to transfer the CNT layer (2) from the heat-resistant textured substrate (6) to the metal pedestal (4).