A method of processing a workpiece may include forming a first layer on a first side of a base layer. The base layer may be part of a substrate including a plurality of layers. The method may also include forming a second layer on the first layer. A material of the second layer may include metal. The method may also include forming an opening in the second layer, forming an opening in the first layer by etching, and removing the second layer. The method may include dry etching of the first layer.

There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a lower electrode disposed in the substrate support; a conductive member disposed above the substrate support, the conductive member having at least one coolant inlet and at least one coolant outlet, the conductive member being connected to an RF potential or a DC potential; and an upper electrode assembly including: a conductive plate detachably connected to a bottom surface of the conductive member, the conductive plate having one or more coolant channels communicating with the at least one coolant inlet and the at least one coolant outlet; an electrode plate disposed below the conductive plate; and a conductive bonding sheet disposed between the electrode plate and the conductive plate.

There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a lower electrode disposed in the substrate support; a conductive member disposed above the substrate support, the conductive member having at least one coolant inlet and at least one coolant outlet, the conductive member being connected to an RF potential or a DC potential; and an upper electrode assembly including: a conductive plate detachably connected to a bottom surface of the conductive member, the conductive plate having one or more coolant channels communicating with the at least one coolant inlet and the at least one coolant outlet; an electrode plate disposed below the conductive plate; and a conductive bonding sheet disposed between the electrode plate and the conductive plate.

An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors. Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors.

Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

An anode for an X-ray tube is provided. The anode has a shape configured such that, in use: an electron beam impinges upon the anode at a focal spot on the surface of the anode, and the anode is heated by the electron beam from a first state to a predetermined second state and undergoes resulting thermal expansion causing a change in the location of the focal spot on the surface of the anode, wherein the configured shape of the anode is such that the spatial position of the focal spot with respect to the X-ray tube is substantially the same for the first state and the second state. A method of producing an anode for an X-ray tube is also provided.

An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors.

Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

An anode structure for a magnetron provides for low eddy currents and efficient water cooling. The anode structure may be made by machining a bimetal blank including an out layer of a first metal and an inner layer of a second metal and formed by explosion bonding. The second metal has a resistivity lower than first metal and a thermal conductivity higher than the first metal. The machining may result in the anode structure with vanes each having a center (tip) portion made of the second metal and the rest made of the first metal. The machined anode structure may be coated with the second metal.

Provided are a plurality of embodiments, including, but not limited to, a device for generating efficient low and high average power output Gamma Rays via relativistic particle bombardment of element targets using an efficient particle injector and accelerator at low and high average power levels suitable for element transmutation and power generation with an option for efficient remediation of radioisotope release into any environment. The devices utilize diamond or diamond-like carbon materials and active cooling for improved performance.

Provided are a plurality of embodiments, including, but not limited to, a device for generating efficient low and high average power output Gamma Rays via relativistic particle bombardment of element targets using an efficient particle injector and accelerator at low and high average power levels suitable for element transmutation and power generation with an option for efficient remediation of radioisotope release into any environment. The devices utilize diamond or diamond-like carbon materials and active cooling for improved performance.