The power conversion device includes: a main circuit having first and second wiring layers formed respectively on both surfaces of a base board, mounted parts mounted on the first and second wiring layers, and first and second GND layers formed respectively, between external- and internal-layer portions of the base board and in regions corresponding to the mounted parts each being a mounted part which forms a circuit other than a circuit having an inductance component as a lumped constant, and to the first and second wiring layers; and a cooler attached to the base board by means of fixing screws through a first through-hole created in an end portion of the board; wherein the first and second GND layers are each formed so that creepage distance is created around a second through-hole in which a lead insertion part that mutually connects the first and second wiring layers is inserted.

A semiconductor device includes a chip package comprising a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die having an active surface, a back surface opposite to the active surface, and a thermal enhancement pattern on the back surface; and a heat dissipation structure connected to the chip package, the heat dissipation structure comprising a heat spreader having a flow channel for a cooling liquid, and the cooling liquid in the flow channel being in contact with the thermal enhancement pattern.

An arrangement includes a housing and a printed circuit board (PCB) arranged vertically above the housing. The housing includes: at least one protrusion attached to sidewalls and arranged on an outside of the housing at a lower end with at least one first through hole provided in the protrusion; holding devices each arranged inside a first through hole and/or between the PCB and the first through hole; and fastening elements configured to attach the housing to a heat sink or base plate. Each holding device is configured to clamp a corresponding fastening element such that the fastening elements are secured in defined positions, and to align each fastening element with a different first through hole. The PCB includes second through holes each arranged vertically above and aligned with a different fastening element. A diameter of each second through hole is less than the largest diameter of the respective fastening element.

Micro devices having enhanced through printed circuit board (PCB) heat transfer are provided. In one example, a micro device is provided that includes a PCB, a thermal management device, a chip package, a bracket, and a plurality of extra-package heat conductors. The chip package has a first side facing the thermal management device and a second side mounted to a first side of the PCB. The bracket is disposed on a second side of the PCB that faces away from the chip package. The plurality of extra-package heat conductors are disposed laterally outward of the chip package and provide at least a portion of a thermally conductive heat transfer path between the bracket and the thermal management device through the PCB.

The disclosure describes a lid allowing for a thermal interface material with fluidity, like a liquid metal, in a lidded flip chip package, including: a lid, a sealing ring for forming a sealed gap between a flip chip and the lid, a storage tunnel in the lid for accepting or releasing a liquid from or to the sealed gap, a connecting hole connecting the sealed gap with the storage tunnel, an injection hole with a plug, wherein a plug structure is formed at an outer end of the storage tunnel for opening or closing it, a slippery skin is arranged on an inner surface of the storage tunnel for a better flow of a liquid metal in it, the sealed gap is completely filled with a liquid metal, and a portion of the storage tunnel is filled with the same liquid metal and its remaining portion is filled with a gas.

A semiconductor device includes a chip package comprising a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die having an active surface, a back surface opposite to the active surface, and a thermal enhancement pattern on the back surface; and a heat dissipation structure connected to the chip package, the heat dissipation structure comprising a heat spreader having a flow channel for a cooling liquid, and the cooling liquid in the flow channel being in contact with the thermal enhancement pattern.

A microprocessor carrier comprising a lever having an elongate arm and a wedge structure extending from one end of the elongate arm, and a frame comprising and a fulcrum structure to receive the lever and a microprocessor. The fulcrum structure is to couple the lever to the frame.

A semiconductor device includes a chip package comprising a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die having an active surface, a back surface opposite to the active surface, and a thermal enhancement pattern on the back surface; and a heat dissipation structure connected to the chip package, the heat dissipation structure comprising a heat spreader having a flow channel for a cooling liquid, and the cooling liquid in the flow channel being in contact with the thermal enhancement pattern.

The power conversion device includes: a main circuit having first and second wiring layers formed respectively on both surfaces of a base board, mounted parts mounted on the first and second wiring layers, and first and second GND layers formed respectively, between external- and internal-layer portions of the base board and in regions corresponding to the mounted parts each being a mounted part which forms a circuit other than a circuit having an inductance component as a lumped constant, and to the first and second wiring layers; and a cooler attached to the base board by means of fixing screws through a first through-hole created in an end portion of the board; wherein the first and second GND layers are each formed so that creepage distance is created around a second through-hole in which a lead insertion part that mutually connects the first and second wiring layers is inserted.

A plate-shaped conductor is placed on an upper surface of a plate-shaped heat dissipation member with an insulation member interposed therebetween. A heat insulation member is placed at a location that is different from a location where the conductor is placed, on the upper surface of the heat dissipation member. An FET is electrically connected to the conductor. When current flows through the FET, the FET generates heat. A microcomputer that outputs a control signal for controlling operation of the FET is connected to an upper surface of the circuit board and is located opposite to the heat insulation member with the circuit board interposed therebetween.