An electrostatic chuck includes a base plate and a ceramic dielectric substrate. The ceramic dielectric substrate has a first major surface. The first major surface includes at least a first region and a second region. At least one first gas introduction hole connected to at least one of multiple first grooves. The first grooves include a first boundary groove, and at least one first in-region groove. Multiple second grooves and at least one second gas introduction hole are provided in the second region. The second grooves are include a second boundary groove extending along the first boundary and are provided to be most proximal to the first boundary. A groove end portion-end portion distance between the first boundary groove and the second boundary groove is smaller than a groove end portion-end portion distance between the first boundary groove and the first in-region groove.

An electrostatic chuck includes a base plate and a ceramic dielectric substrate. The ceramic dielectric substrate has a first major surface. The first major surface includes at least a first region and a second region. At least one first gas introduction hole connected to at least one of multiple first grooves. The first grooves include a first boundary groove, and at least one first in-region groove. Multiple second grooves and at least one second gas introduction hole are provided in the second region. The second grooves are include a second boundary groove extending along the first boundary and are provided to be most proximal to the first boundary. A groove end portion-end portion distance between the first boundary groove and the second boundary groove is smaller than a groove end portion-end portion distance between the first boundary groove and the first in-region groove.

Provided is an assembling apparatus for a semiconductor manufacturing apparatus. The assembling apparatus includes: a body; lift attached to the body and configured to move a reaction tube having an opening at a lower end portion thereof vertically, thereby allowing a gas supply pipe to be installed inside the reaction tube through the opening while the reaction tube is held by the lift; gas supply source configured to supply a gas into the reaction tube through the gas supply pipe while the reaction tube is held by the lift; and an exhaust mechanism including a pump configured to exhaust an inside of the reaction tube through the opening, thereby performing a leakage test of the reaction tube while the reaction tube is held by the lift.

A method includes providing a rail, a first conveying unit movably mounted on the rail, and a central controller configured to control the first conveying unit; displacing the first conveying unit along the rail at a first speed; obtaining a first vibration measurement upon the displacement of the first conveying unit along the rail at the first speed; analyzing the first vibration measurement; transmitting a first signal based on the analysis of the first vibration measurement to the central controller; providing a second conveying unit movably mounted on the rail; transmitting a first feedback signal based on the first signal from the central controller to the second conveying unit; and displacing the second conveying unit along the rail at a second speed based on the first feedback signal.

An apparatus for treating a substrate includes a process chamber having a treatment space defined therein, a support unit for supporting the substrate in the treatment space, a liquid supply unit for supplying treating liquid to the substrate supported on the support unit, and a heating unit disposed in the support unit for heating the substrate supported on the support unit, wherein the heating unit includes a plurality of lamps to heat the substrate, and a window disposed above the lamps to transmit light emitted from the lamps, wherein the window includes a base in a form of a plate, and light adjustment means formed on the base to spread or converge light emitted from the lamps.

A method includes providing a rail, a first conveying unit movably mounted on the rail, and a central controller configured to control the first conveying unit; displacing the first conveying unit along the rail at a first speed; obtaining a first vibration measurement upon the displacement of the first conveying unit along the rail at the first speed; analyzing the first vibration measurement; transmitting a first signal based on the analysis of the first vibration measurement to the central controller; providing a second conveying unit movably mounted on the rail; transmitting a first feedback signal based on the first signal from the central controller to the second conveying unit; and displacing the second conveying unit along the rail at a second speed based on the first feedback signal.

Wafer processing with no dummies is sets forth, wherein an apparatus includes: a boat that hold a product substrates in array at all of positions where substrates may be held; a tubular reactor that houses the boat; a furnace surrounding an upper side and a lateral side of the reactor; a heater provided in the furnace and adapted to heat a side portion of the reactor; a ceiling heater provided in the furnace and adapted to heat a ceiling of the reactor; and a cap heater provided inside the reactor and below the boat; a gas supply mechanism individually supplying a gas to a top side of each of the product substrates.

An electrostatic chuck includes a base plate and a ceramic dielectric substrate. The ceramic dielectric substrate has a first major surface. The first major surface includes at least a first region and a second region. At least one first gas introduction hole connected to at least one of multiple first grooves. The first grooves include a first boundary groove, and at least one first in-region groove. Multiple second grooves and at least one second gas introduction hole are provided in the second region. The second grooves are include a second boundary groove extending along the first boundary and are provided to be most proximal to the first boundary. A groove end portion-end portion distance between the first boundary groove and the second boundary groove is smaller than a groove end portion-end portion distance between the first boundary groove and the first in-region groove.

A conveying unit includes a housing; a collision prevention mechanism disposed on a sidewall of the housing; a gripping member configured to hold a carrier for carrying a semiconductor structure; a sensor disposed on the gripping member and configured to measure and collect data associated with vibration of the gripping member; and an unit controller disposed on the gripping member and configured to analyze the data from the sensor and control a movement of the conveying unit.

A first carrier has a first plate. A tape is disposed on the first plate. A second plate is disposed over the first plate. The second plate has a trench aligned to the tape and an opening formed through the second plate over the tape. A singulated semiconductor package is disposed on the tape in the opening of the second plate. A second carrier has a static datum and a movable datum. The movable datum is moved toward the static datum. An aperture substrate is disposed around the static datum and movable datum. A manufacturing process is performed on the aperture substrate.