The disclosure provides a substrate cleaning device and a substrate processing device capable of suppressing erroneous rotation detection of an optical sensor due to adhesion of droplets or mist. A substrate cleaning device includes a substrate cleaning part for cleaning a substrate, a drive roller for rotating the substrate, a driven roller rotated by the substrate, and a rotation detection part for detecting rotation of the driven roller. The rotation detection part includes a detected part provided on the driven roller, an optical sensor for detecting rotation of the detected part by irradiation with detection light, and a liquid filling part for filling an optical path forming space in which an optical path of the detection light is formed with a liquid having transmittance.

A substrate cleaning apparatus and related apparatuses/methods are disclosed. In one embodiment, a substrate cleaning apparatus includes: a first spindle group including a first driving spindle having a first driving roller configured to rotate a substrate and an idler spindle having a driven roller rotated by the substrate; a second spindle group including a plurality of second driving spindles each having a second driving roller configured to rotate the substrate; a cleaning mechanism configured to clean the substrate rotated by the first driving roller and the plurality of second driving rollers; and a rotation detector configured to detect the rotational speed of the driven roller. The driven roller is positioned on the opposite side to a direction in which the substrate receives a force from the cleaning mechanism.

A substrate processing apparatus includes a polishing member having a polishing surface configured to perform a polishing of a main surface of a substrate; a first dressing member having a first dressing surface configured to perform a dressing of the polishing surface; a second dressing member having a second dressing surface configured to perform a dressing of the first dressing surface; a holding member configured to hold the polishing member and the second dressing member; and a driving unit configured to, by moving the holding member, switch a first state in which the first dressing surface and the polishing surface come into contact with each other to perform the dressing of the polishing surface and a second state in which the first dressing surface and the second dressing surface come into contact with each other to perform the dressing of the first dressing surface.

An end of polishing of a wafer is determined for each of wafers at a high accuracy. A wafer processing method includes: a first process of acquiring an initial state of a processing target surface of a wafer; a second process of forming a coating film on the wafer after the first process; a third process of polishing the processing target surface of the wafer by a polishing member based on initial polishing conditions in a state where the polishing member is in contact with the processing target surface of the wafer; a fourth process of acquiring a processed state of the processing target surface of the wafer after the third process; and a fifth process of determining an end of polishing, an insufficiency in polishing, or an excess in polishing based on the initial state and the processed state.

A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

Various methods of cleaning a substrate are provided. In one aspect, method of cleaning a substrate, comprising: holding and rotating a substrate by a substrate holder; and supplying a chemical liquid to a chemical liquid nozzle and supplying two fluids to a two-fluid nozzle while moving the chemical-liquid nozzle and the two-fluid nozzle radially outwardly from the center to the periphery of the substrate, wherein the distance of the chemical-liquid nozzle from a rotating axis of the substrate holder is longer than the distance of the two-fluid nozzle from the rotating axis of the substrate holder while the chemical-liquid nozzle and the two-fluid nozzle are moved radially outwardly from the rotating axis of the substrate holder.

A substrate processing method capable of suppressing corrosion of a conductive material on a surface of a substrate by supplying a liquid having a reduced concentration of dissolved oxygen onto the substrate. The substrate processing method includes: dissolving an inert gas in a liquid at not less than a saturation solubility to replace oxygen dissolved in the liquid with the inert gas; generating bubbles of the inert gas in the liquid by depressurizing the liquid in which the inert gas is dissolved; and processing the substrate while supplying the liquid containing the bubbles to the surface of the substrate.

A bonding apparatus is configured to bond a first substrate and a second substrate to prepare a combined substrate. The first substrate includes a base substrate, and a device layer formed on a surface of the base substrate facing the second substrate. The bonding apparatus includes a first holder configured to hold the first substrate; a second holder configured to hold the second substrate; a moving unit configured to move the first holder and the second holder relative to each other; and a total thickness measurement controller configured to control a thickness detector, which is configured to measure a total thickness of the combined substrate, to measure the total thickness at multiple points.

A device includes: state information acquisition unit that acquires state information including position of substrate in the device and elapsed time in each unit; action selection unit having prediction model that predicts value, in a certain state, to performing action whether to take out new substrate from the cassette and to which processing unit substrate is transferred, the action selection unit selecting one action based on the prediction model taking, as input, the acquired state information; instruction signal transmission unit that transmits instruction signal so as to perform the selected action; operation result acquisition unit that acquires operation result including number of substrates processed and waiting time; and prediction model update unit that calculates reward based on acquired operation result such that reward increases as the number of substrates processed increases and waiting time is short and that updates the prediction model based on the reward.

A polishing method capable of accurately determining a polishing end point of a substrate is disclosed. The method is a film-thickness measuring method for a substrate W using a film-thickness measuring device, at least a part of which being mounted in a polishing table configured to support the polishing pad. The method includes measuring film thicknesses of the substrate W, while rotating the substrate W on a polishing surface of the polishing pad by a polishing head and controlling a position of the film-thickness measuring device relative to the polishing head.