A first frame includes portions of a first short side surface and a first long side surface, in which a plurality of conductor layers to which a plurality of DC electrode terminals are connected, and a plurality of insulating layers arranged between the plurality of conductor layers are stacked. Further, a second frame includes portions of a second short side surface and a second long side surface.

A first signal lead pin is bent such that one end is connected to a first signal line of a differential coplanar line, and the other end is apart from a mounting surface. A second signal lead pin is bent such that one end is connected to a second signal line of the differential coplanar line, and the other end is apart from the mounting surface. A ground lead pin is bent such that one end is connected to a ground line of the differential coplanar line, and the other end is apart from the mounting surface.

An interconnect for a semiconductor device includes: a carrier; a UV programmable chip mounted on the carrier using a first array of solder connections; a UV light source mounted on the carrier using a second array of solder connections, the UV light source being in optical communication with the UV programmable chip; and a plurality of transmission lines extending on or through the carrier and providing electrical communication between the UV programmable chip and the UV light source.

In one example, an electronic device, comprises a first substrate comprising a first conductive structure, a second substrate comprising a second conductive structure, wherein the first substrate is over the second substrate, a first electronic component between the first substrate and the second substrate, a vertical interconnect between the first substrate and the second substrate, wherein the vertical interconnect is coupled with the first conductive structure and the second conductive structure, and an encapsulant between the first substrate and the second substrate and covering the vertical interconnect. A vertical port on the first electronic component is exposed by an aperture of the first substrate. Other examples and related methods are also disclosed herein.

Embodiments include interposers for use in high speed applications. In an embodiment, the interposer comprises an interposer substrate, and an array of pads on a first surface of the interposer substrate. In an embodiment, a plurality of vias pass through the interposer substrate, where each via is electrically coupled to one of the pads in the array of pads. In an embodiment a plurality of heating elements are embedded in the interposer substrate. In an embodiment a first cable is over the first surface interposer substrate. In an embodiment, the first cable comprises an array of conductive lines along the first cable, where conductive lines proximate to a first end of the cable are electrically coupled to pads in the array of pads.

The coaxial cable assembly generally has a coaxial cable; and a connector assembled to an end of the coaxial cable, the connector having a dielectric body having a connecting surface, a longitudinal groove recessed in the connecting surface and having a groove end spaced from an edge of the connecting surface, and a coplanar waveguide along the connecting surface, the coplanar waveguide having a signal conductor extending from the groove end to the edge and between ground conductors each extending from a respective lateral side of the longitudinal groove to the edge; the end of the coaxial cable being received in the longitudinal groove and having an inner conductor electrically connected to the signal conductor and an outer conductor electrically connected to the ground conductors in a manner allowing connection of the coaxial cable with another coplanar waveguide of an integrated circuit.

A radio-frequency three-dimensional electronic-photonic integrated circuit (RF 3D EPIC) comprises a radio-frequency (RF) photonic integrated circuit (PIC) layer, the RF PIC layer comprising, in a single integrated circuit, at least one RF antenna and at least one photonic device coupling the RF antenna to an optical interface, and further comprises an electronic-photonic integrated circuit (EPIC) assembly optically coupled to the optical interface of the RF PIC layer, the EPIC assembly comprising two or more integrated-circuit dies bonded to one another so as to form a die stack, wherein at least one of the two or more integrated-circuit dies comprises one or more integrated photonic devices and wherein each of the two or more integrated-circuit dies is electrically connected to at least one other integrated-circuit die via an electrically conductive through-wafer interconnect or an electrically conductive through-wafer via.

A semiconductor optical device includes: a laser for emitting light; a modulator for modulating the light using an electroabsorption effect; a chip capacitor that is electrically connected in parallel to the laser; a chip inductor that is electrically connected in series to the chip capacitor, is electrically connected in series to the laser and the chip capacitor as a whole, and includes a first terminal and a second terminal; a solder or a conductive adhesive that directly bonds the first terminal of the chip inductor and the chip capacitor to each other; an electrical wiring group in which the laser, the modulator, the chip capacitor, and the chip inductor are electrically connected to each other; and a substrate on which the laser, the modulator, the chip capacitor, and the chip inductor are mounted.

In one example, an electronic device, comprises a first substrate comprising a first conductive structure, a second substrate comprising a second conductive structure, wherein the first substrate is over the second substrate, a first electronic component between the first substrate and the second substrate, a vertical interconnect between the first substrate and the second substrate, wherein the vertical interconnect is coupled with the first conductive structure and the second conductive structure, and an encapsulant between the first substrate and the second substrate and covering the vertical interconnect. A vertical port on the first electronic component is exposed by an aperture of the first substrate. Other examples and related methods are also disclosed herein.

An interconnect for a semiconductor device includes: a carrier; a UV programmable chip mounted on the carrier using a first array of solder connections; a UV light source mounted on the carrier using a second array of solder connections, the UV light source being in optical communication with the UV programmable chip; and a plurality of transmission lines extending on or through the carrier and providing electrical communication between the UV programmable chip and the UV light source.