At least one unit transistor is arranged over a substrate. A first wiring as a path of current that flows to each unit transistor is arranged over the at least one unit transistor. An inorganic insulation film is arranged over the first wiring. At least one first opening overlapping a partial region of the first wiring in a plan view is provided in the inorganic insulation film. An organic insulation film is arranged over the inorganic insulation film. A second wiring coupled to the first wiring through the first opening is arranged over the organic insulation film and the inorganic insulation film. In a plan view, a region in which the organic insulation film is not arranged is provided outside a region in which the first wiring is arranged. The second wiring is in contact with the inorganic insulation film outside the region in which the first wiring is arranged.

A printed electrical connection structure includes a substrate having one or more electrical connection pads and a micro-transfer printed component having one or more connection posts. Each connection post is in electrical contact with a connection pad. A resin is disposed between and in contact with the substrate and the component. The resin has a reflow temperature less than a cure temperature. The resin repeatedly flows at the reflow temperature when temperature-cycled between an operating temperature and the reflow temperature but does not flow after the resin is exposed to a cure temperature. A solder can be disposed on the connection post or the connection pad. After printing and reflow, the component can be tested and, if the component fails, another component is micro-transfer printed to the substrate, the resin is reflowed again, the other component is tested and, if it passes the test, the resin is finally cured.

A semiconductor device includes a semiconductor die, a redistribution structure, a interconnection structure, and a thermal path structure. The redistribution structure includes an insulation layer over a first surface of the semiconductor die and a conductive trace separated from the first surface by the insulation layer. The conductive trace extends laterally over the first surface from a first end toward a second end that is electrically coupled to a bond pad on the first surface of the semiconductor die. The interconnection structure is coupled to the first end of the conductive trace. The thermal path structure provides a thermal path between the semiconductor die and the interconnection structure. In some embodiment, the thermal path structure comprises a thermal pad that passes through the insulation layer. In other embodiments, the thermal path structure comprises a dummy pad on the first surface of the semiconductor die.

A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

At least one unit transistor is arranged over a substrate. A first wiring as a path of current that flows to each unit transistor is arranged over the at least one unit transistor. An inorganic insulation film is arranged over the first wiring. At least one first opening overlapping a partial region of the first wiring in a plan view is provided in the inorganic insulation film. An organic insulation film is arranged over the inorganic insulation film. A second wiring coupled to the first wiring through the first opening is arranged over the organic insulation film and the inorganic insulation film. In a plan view, a region in which the organic insulation film is not arranged is provided outside a region in which the first wiring is arranged. The second wiring is in contact with the inorganic insulation film outside the region in which the first wiring is arranged.

A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

In an embodiment, a semiconductor device includes a semiconductor body having a first major surface, a second major surface opposing the first major surface and at least one transistor device structure, a source pad and a gate pad arranged on the first major surface, a drain pad and at least one further contact pad coupled to a further device structure. The drain pad and the at least one further contact pad are arranged on the second major surface.

A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

A semiconductor device includes a semiconductor die, a redistribution structure, a interconnection structure, and a thermal path structure. The redistribution structure includes an insulation layer over a first surface of the semiconductor die and a conductive trace separated from the first surface by the insulation layer. The conductive trace extends laterally over the first surface from a first end toward a second end that is electrically coupled to a bond pad on the first surface of the semiconductor die. The interconnection structure is coupled to the first end of the conductive trace. The thermal path structure provides a thermal path between the semiconductor die and the interconnection structure. In some embodiment, the thermal path structure comprises a thermal pad that passes through the insulation layer. In other embodiments, the thermal path structure comprises a dummy pad on the first surface of the semiconductor die.

Provided is a semiconductor device that is resistant to the corrosion of titanium nitride forming an anti-reflection film. The semiconductor device includes: a wiring layer which includes a wiring film made of aluminum or an aluminum alloy and formed on a substrate and a titanium nitride film formed on the wiring film; a protection layer which covers a top surface and a side surface of the wiring layer; and a pad portion which penetrates the protection layer and the titanium nitride film, and which exposes the wiring film, the protection layer including a first silicon nitride film, an oxide film, and a second silicon nitride film which are layered in the stated order from the side of the wiring layer.