Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

A method for processing a semiconductor wafer is provided. A semiconductor wafer includes a first main surface and a second main surface. Defects are generated inside the semiconductor wafer to define a detachment plane parallel to the first main surface. Processing the first main surface defines a plurality of electronic semiconductor components. A glass structure is provided which includes a plurality of openings. The glass structure is attached to the processed first main surface, each of the plurality of openings leaving a respective area of the plurality of electronic semiconductor components uncovered. A polymer layer is applied to the second main surface and the semiconductor wafer is split into a semiconductor slice and a remaining semiconductor wafer by cooling the polymer layer beneath its glass transition temperature along the detachment plane. The semiconductor slice includes the plurality of electronic semiconductor components.

A semiconductor chip includes a chip pad arranged at a surface of the semiconductor chip. A dielectric layer is arranged at the surface of the semiconductor chip. The dielectric layer has an opening within which a contact portion of the chip pad is exposed, the opening having at least one straight side. The dielectric layer includes a solder flux outgassing trench arranged separate from and in the vicinity of the at least one straight side of the opening and that extends laterally beyond sides of the opening adjoining the straight side.

A structure includes a die substrate; a passivation layer on the die substrate; first and second interconnect structures on the passivation layer; and a barrier on the passivation layer, at least one of the first or second interconnect structures, or a combination thereof. The first and second interconnect structures comprise first and second via portions through the passivation layer to first and second conductive features of the die substrate, respectively. The first and second interconnect structures further comprise first and second pads, respectively, and first and second transition elements on a surface of the passivation layer between the first and second via portion and the first and second pad, respectively. The barrier is disposed between the first pad and the second pad. The barrier does not fully encircle at least one of the first pad or the second pad.

A structure includes a die substrate; a passivation layer on the die substrate; first and second interconnect structures on the passivation layer; and a barrier on the passivation layer, at least one of the first or second interconnect structures, or a combination thereof. The first and second interconnect structures comprise first and second via portions through the passivation layer to first and second conductive features of the die substrate, respectively. The first and second interconnect structures further comprise first and second pads, respectively, and first and second transition elements on a surface of the passivation layer between the first and second via portion and the first and second pad, respectively. The barrier is disposed between the first pad and the second pad. The barrier does not fully encircle at least one of the first pad or the second pad.

A semiconductor chip includes a chip pad arranged at a surface of the semiconductor chip. A dielectric layer is arranged at the surface of the semiconductor chip. The dielectric layer has an opening within which a contact portion of the chip pad is exposed, the opening having at least one straight side. The dielectric layer includes a solder flux outgassing trench arranged separate from and in the vicinity of the at least one straight side of the opening and that extends laterally beyond sides of the opening adjoining the straight side.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

A method for processing a semiconductor wafer is provided. A semiconductor wafer includes a first main surface and a second main surface. Defects are generated inside the semiconductor wafer to define a detachment plane parallel to the first main surface. Processing the first main surface defines a plurality of electronic semiconductor components. A glass structure is provided which includes a plurality of openings. The glass structure is attached to the processed first main surface, each of the plurality of openings leaving a respective area of the plurality of electronic semiconductor components uncovered. A polymer layer is applied to the second main surface and the semiconductor wafer is split into a semiconductor slice and a remaining semiconductor wafer by cooling the polymer layer beneath its glass transition temperature along the detachment plane. The semiconductor slice includes the plurality of electronic semiconductor components.

Packaging methods for semiconductor devices and methods of packaging thereof are disclosed. In some embodiments, a device includes a packaging apparatus and contact pads disposed on the packaging apparatus. The contact pads are arranged in an array of rows and columns. The contact pads include first contact pads proximate a perimeter region of the packaging apparatus and second contact pads disposed in an interior region of the packaging apparatus. A dam structure that is continuous is disposed around the second contact pads. The contact pads comprise a mounting region for a semiconductor device.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.