Embodiments include an electronic system and methods of forming an electronic system. In an embodiment, the electronic system may include a package substrate and a die coupled to the package substrate. In an embodiment, the electronic system may also include an integrated heat spreader (IHS) that is coupled to the package substrate. In an embodiment the electronic system may further comprise a thermal interface pad between the IHS and the die. In an embodiment the die is thermally coupled to the IHS by a liquid metal thermal interface material (TIM) that contacts the thermal interface pad.

A semiconductor structure includes a first semiconductor package, a second semiconductor package, a heat spreader and an underfill layer. The first semiconductor package includes a plurality of lower semiconductor chips and a first dielectric encapsulation layer disposed around the plurality of the lower semiconductor chips. The second semiconductor package is disposed over and corresponds to one of the plurality of lower semiconductor chips, wherein the second semiconductor package includes a plurality of upper semiconductor chips and a second dielectric encapsulation layer disposed around the plurality of upper semiconductor chips. The heat spreader is disposed over and corresponds to another of the plurality of lower semiconductor chips. The underfill layer is disposed over the first semiconductor package and around the second semiconductor package and the heat spreader.

A semiconductor structure includes a first semiconductor package, a second semiconductor package, a heat spreader and an underfill layer. The first semiconductor package includes a plurality of lower semiconductor chips and a first dielectric encapsulation layer disposed around the plurality of the lower semiconductor chips. The second semiconductor package is disposed over and corresponds to one of the plurality of lower semiconductor chips, wherein the second semiconductor package includes a plurality of upper semiconductor chips and a second dielectric encapsulation layer disposed around the plurality of upper semiconductor chips. The heat spreader is disposed over and corresponds to another of the plurality of lower semiconductor chips. The underfill layer is disposed over the first semiconductor package and around the second semiconductor package and the heat spreader.

Embodiments disclosed herein include electronic packages and methods of fabricating electronic packages. In an embodiment, an electronic package comprises an interposer, where a cavity passes through the interposer, and a nested component in the cavity. In an embodiment, the electronic package further comprises a die coupled to the interposer by a first interconnect and coupled to the nested component by a second interconnect. In an embodiment, the first and second interconnects comprise a first bump, a bump pad over the first bump, and a second bump over the bump pad.

A method for fabricating a semiconductor die package includes: providing a semiconductor transistor die, the semiconductor transistor die having a first contact pad on a first lower main face and/or a second contact pad on an upper main face; fabricating a frontside electrical conductor onto the second contact pad and a backside electrical conductor onto the first contact pad; and applying an encapsulant covering the semiconductor die and at least a portion of the electrical conductor, wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.

A wafer level package device, electronic device, and fabrication methods for fabrication of the wafer level package device are described that include forming an exposed lead tip on the wafer level package for providing a solder buttress structure when coupling the wafer level package device to another electrical component. In implementations, the wafer level package device includes at least one integrated circuit die, a metal pad, a first dielectric layer, a redistribution layer, a second dielectric layer, a pillar structure, a molding layer, a pillar layer, and a plating layer, where the pillar layer is sawn to form pad contacts on at least two sides of the wafer level package device. The exposed pad contact facilitate a solder fillet and buttress structure resulting in improved board level reliability.

A power semiconductor contact structure for power semiconductor modules, which has at least one substrate 1 and a metal moulded body 2 as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer 3a with regions of varying thickness. The metal moulded body 2 takes the form here of a flexible contacting film 5 of such a thickness that this contacting film is sintered with its side 4 facing the sintering layer 3a onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal moulded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal moulded body 2 or the substrate, followed by sintering together the contacting film 5 with the substrate 1 by using the properties of the layer of sintering material that are conducive to connection, the contacting film 5 being made to develop its distinct form to correspond to the varying thickness of the layer of sintering material 3a.

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.