A process for forming a semiconductor package is disclosed. The process includes providing a first substrate including a first dielectric layer. The process includes overlaying a first surface of the first dielectric layer with a first bonding layer that includes aluminum. The process includes providing a second substrate including a second dielectric layer. The process includes overlaying a second surface of the second dielectric layer with a second bonding layer that includes alkoxy-siloxide. The process includes forming a third bonding layer by combining the first bonding layer and the second bonding layer so as to bond the first substrate to the second substrate.

A die structure includes a first die having a first surface and a second surface opposite the first surface. The first die includes sidewalls extending between the first and second surfaces. The die structure includes conductive ink printed traces including a first group of the conductive ink printed traces on the first surface of the first semiconductor die. A second group of the conductive ink printed traces are on the second surface of the semiconductor die, and a third group of the conductive ink printed traces are on the sidewalls of the semiconductor die.

A die structure includes a first die having a first surface and a second surface opposite the first surface. The first die includes sidewalls extending between the first and second surfaces. The die structure includes conductive ink printed traces including a first group of the conductive ink printed traces on the first surface of the first semiconductor die. A second group of the conductive ink printed traces are on the second surface of the semiconductor die, and a third group of the conductive ink printed traces are on the sidewalls of the semiconductor die.

A die structure includes a first die having a first surface and a second surface opposite the first surface. The first die includes sidewalls extending between the first and second surfaces. The die structure includes conductive ink printed traces including a first group of the conductive ink printed traces on the first surface of the first semiconductor die. A second group of the conductive ink printed traces are on the second surface of the semiconductor die, and a third group of the conductive ink printed traces are on the sidewalls of the semiconductor die.

A die structure includes a first die having a first surface and a second surface opposite the first surface. The first die includes sidewalls extending between the first and second surfaces. The die structure includes conductive ink printed traces including a first group of the conductive ink printed traces on the first surface of the first semiconductor die. A second group of the conductive ink printed traces are on the second surface of the semiconductor die, and a third group of the conductive ink printed traces are on the sidewalls of the semiconductor die.

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the passivation layer, wherein the conductive pillar comprises an upper portion substantially perpendicular to a surface of the substrate and a lower portion having tapered sidewalls.

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

A first semiconductor structure having a first metallic structure that has a convex outermost surface and a second semiconductor structure having a second metallic structure that has a concave outermost surface are first provided. The first and second metallic structures are provided utilizing liner systems that have an opposite galvanic reaction to the metal or metal alloy that constitutes the first and second metallic structures such that during a planarization process the metal liners have a different removal rate than the metal or metal alloy that constitutes the first and second metallic structures. The first semiconductor structure and the second semiconductor structure are then bonded together such that the convex outermost surface of the first metallic structure is in direct contact with the concave outermost surface of the second metallic structure.

A first semiconductor structure having a first metallic structure that has a convex outermost surface and a second semiconductor structure having a second metallic structure that has a concave outermost surface are first provided. The first and second metallic structures are provided utilizing liner systems that have an opposite galvanic reaction to the metal or metal alloy that constitutes the first and second metallic structures such that during a planarization process the metal liners have a different removal rate than the metal or metal alloy that constitutes the first and second metallic structures. The first semiconductor structure and the second semiconductor structure are then bonded together such that the convex outermost surface of the first metallic structure is in direct contact with the concave outermost surface of the second metallic structure.