Bond pads for semiconductor die assemblies, and associated methods and systems are disclosed. In one embodiment, a semiconductor die assembly includes a first semiconductor die including a first bond pad on a first side of the first semiconductor die. The semiconductor die assembly further includes a second semiconductor die including a second bond pad on a second side of the second semiconductor die. The first bond pad is aligned and bonded to the second bond pad at a bonding interface between the first and second bond pads, and at least one of the first and second bond pads include a first metal and a second metal different than the first metal. Further, the first metal is located at the bonding interface and the second metal has a first thickness corresponding to at least one-fourth of a second thickness of the first or second bond pad.

The present disclosure is directed to a wafer level chip scale package (WLCSP) with various combinations of contacts and Under Bump Metallizations (UBMs) having different structures and different amounts solder coupled to the contacts and UBMs. Although the contacts have different structures and the volume of solder differs, the total standoff height along the WLCSP remains substantially the same. Each portion of solder coupled to each respective contact and UBM includes a point furthest away from an active surface of a die of the WLCSP. Each point of each respective portion of solder is co-planar with each other respective point of the other respective portions of solder. Additionally, the contacts with various and different structures are positioned accordingly on the active surface of the die of the WLCSP.

The present disclosure is directed to a wafer level chip scale package (WLCSP) with various combinations of contacts and Under Bump Metallizations (UBMs) having different structures and different amounts solder coupled to the contacts and UBMs. Although the contacts have different structures and the volume of solder differs, the total standoff height along the WLCSP remains substantially the same. Each portion of solder coupled to each respective contact and UBM includes a point furthest away from an active surface of a die of the WLCSP. Each point of each respective portion of solder is co-planar with each other respective point of the other respective portions of solder. Additionally, the contacts with various and different structures are positioned accordingly on the active surface of the die of the WLCSP.

A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

A substrate debonding apparatus configured to separate a support substrate attached to a first surface of a device substrate by an adhesive layer, the substrate debonding apparatus including a substrate chuck configured to support a second surface of the device substrate, the second surface being opposite to the first surface of the device substrate; a light irradiator configured to irradiate light to an inside of the adhesive layer; and a mask between the substrate chuck and the light irradiator, the mask including an opening through which an upper portion of the support substrate is exposed, and a first cooling passage or a second cooling passage, the first cooling passage being configured to provide a path in which a coolant is flowable, the second cooling passage being configured to provide a path in which air is flowable and to provide part of the air to a central portion of the opening.

An integrated memory assembly comprises a memory die and a control die bonded to the memory die. The memory die includes a memory structure of non-volatile memory cells. The control die is configured to program user data to and read user data from the memory die in response to commands from a memory controller. To utilize space more efficiently on the memory die, the control die compacts fragmented data on the memory die.

Disclosed is a flip-chip device. The flip-chip device includes a die having a plurality of under bump metallizations (UBMs); and a package substrate having a plurality of bond pads. The plurality of UBMs include a first set of UBMs having a first size and a first minimum pitch and a second set of UBMs having a second size and a second minimum pitch. The first set of UBMs and the second set of UBMs are each electrically coupled to the package substrate by a bond-on-pad connection.

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.