A packaging structure, a method for manufacturing the same and a semiconductor device are provided. The packaging structure includes a redistribution layer electrically connected with an interconnection layer of a semiconductor functional structure, and an insulating layer covering and exposing part of the redistribution layer. The exposed part of the redistribution layer includes at least one first pad. The first pad includes a first area and a second area arranged continuously. The first area is configured for testing. The second area is configured for performing functional interaction corresponding to content of the test.

A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

A method for fabricating a semiconductor die package includes: providing a semiconductor transistor die, the semiconductor transistor die having a first contact pad on a first lower main face and/or a second contact pad on an upper main face; fabricating a frontside electrical conductor onto the second contact pad and a backside electrical conductor onto the first contact pad; and applying an encapsulant covering the semiconductor die and at least a portion of the electrical conductor, wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.

In some examples, a package comprises a die and a redistribution layer coupled to the die. The redistribution layer comprises a metal layer, a brass layer abutting the metal layer, and a polymer layer abutting the brass layer.

In some examples, a package comprises a die and a redistribution layer coupled to the die. The redistribution layer comprises a metal layer, a brass layer abutting the metal layer, and a polymer layer abutting the brass layer.

Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer. The patterned first photoresist layer is used to form a first opening in an interconnect structure. The patterned first photoresist is removed, and a second photoresist layer is formed over the interconnect structure and in the first opening. The second photoresist layer is patterned to form a second opening over the interconnect structure in the first opening. The second opening is narrower than the first opening. At least one metal layer is plated through the patterned second photoresist layer to form the connector.

Various embodiments provide a method of forming a bondpad, wherein the method comprises providing a raw bondpad, and forming a recess structure at a contact surface of the raw bondpad, wherein the recess structure comprises sidewalls being inclined with respect to the contact surface.

Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. The fill layer is composed of noble metal (such as copper) and active metal (such as Zn). Then the fill metal layer is turned into a metal alloy after annealing. A dealloying is performed to the metal alloy to remove the active metal from the metal alloy while the noble metal remains to self-assemble into porous (nanoporous) structure metal. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using dielectric-to-dielectric direct bonding techniques, with the fill nanoporous metal layer in the recesses in one of the first and second interconnect structures. After the following batch annealing, the fill nanoporous metal layer turns into pure bulk metal same as conductive interconnect structures due to the heat expansion of conductive interconnect structures and nanoporous metal densification.

Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. The fill layer is composed of noble metal (such as copper) and active metal (such as Zn). Then the fill metal layer is turned into a metal alloy after annealing. A dealloying is performed to the metal alloy to remove the active metal from the metal alloy while the noble metal remains to self-assemble into porous (nanoporous) structure metal. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using dielectric-to-dielectric direct bonding techniques, with the fill nanoporous metal layer in the recesses in one of the first and second interconnect structures. After the following batch annealing, the fill nanoporous metal layer turns into pure bulk metal same as conductive interconnect structures due to the heat expansion of conductive interconnect structures and nanoporous metal densification.

A substrate wafer arrangement includes a substrate layer having a first main side and a second main side opposite the first main side, the first main side being a front-side and the second main side being a back-side, the substrate layer further having a plurality of semiconductor chips. A polymer structure arranged between the plurality of semiconductor chips extends at least from the front-side of the substrate layer to the back-side of the substrate layer and protrudes from a back-side surface of the substrate layer. The polymer structure separates a plurality of insular islands of conductive material, each insular island corresponding to a respective semiconductor chip of the plurality of semiconductor chips. Semiconductor devices produced from the substrate wafer arrangement are also described.