A solder pad includes a surface. A tin layer is arranged on the surface. At least one out of a bismuth layer, an antimony layer and a nickel layer is arranged on the tin layer.

A light emitting device including a substrate having a protruding pattern on an upper surface thereof, a first sub-unit disposed on the substrate, a second sub-unit disposed between the substrate and the first sub-unit, a third sub-unit disposed between the substrate and the second sub-unit, a first insulation layer at least partially in contact with side surfaces of the first, second, and third sub-units, and a second insulation layer at least partially overlapping with the first insulation layer, in which at least one of the first insulation layer and the second insulation layer includes a distributed Bragg reflector.

A light emitting device including a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and a common electrode electrically connected to a first conductivity type semiconductor layer of each of the first, second, and third LED stacks, in which the common electrode includes a step in at least one of the first, second and third LED stacks.

Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.

Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.

According to one embodiment, there is provided a semiconductor device including a first wiring, a semiconductor chip, a first bonding member, having a first melting temperature, located between the first wiring and the semiconductor chip, and a second wiring including a first connection unit and a second connection unit spaced from the first connection unit. A second bonding member having a second melting temperature higher than the first melting temperature is located between the semiconductor chip and the first connection unit. A third wiring is also provided, and a third bonding member having a third melting temperature lower than the second melting temperature is located between the second connection unit and the third wiring.

A semiconductor device includes a semiconductor substrate having a semiconductor device on an active surface thereof. The semiconductor substrate has a quadrangular plane. An insulating layer is on the active surface of the semiconductor substrate. A passivation layer is on the insulating layer. The insulating layer includes an insulating layer central portion having a side surface extending in parallel with a side surface of the semiconductor substrate. The side surface of the insulating layer central portion is spaced apart from the side surface of the semiconductor substrate by a first size. An insulating layer corner portion is at each corner of the insulating layer central portion and protrudes from the side surface of the insulating layer central portion in a horizontal direction. The passivation layer covers the insulating layer central portion.

A semiconductor device includes a semiconductor substrate having a semiconductor device on an active surface thereof. The semiconductor substrate has a quadrangular plane. An insulating layer is on the active surface of the semiconductor substrate. A passivation layer is on the insulating layer. The insulating layer includes an insulating layer central portion having a side surface extending in parallel with a side surface of the semiconductor substrate. The side surface of the insulating layer central portion is spaced apart from the side surface of the semiconductor substrate by a first size. An insulating layer corner portion is at each corner of the insulating layer central portion and protrudes from the side surface of the insulating layer central portion in a horizontal direction. The passivation layer covers the insulating layer central portion.

Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.