H01L2224/05195

Bonding pad structure for memory device and method of manufacturing the same
11342292 · 2022-05-24 · ·

A bonding pad structure and a method thereof includes: a base metal layer formed on a substrate; first conductive vias arranged in a peripheral region of the base metal layer; an intermediate buffer layer formed above the base metal layer, the intermediate buffer layer spaced from and aligned with the base metal layer, the first conductive vias vertically connecting the base metal layer and the intermediate buffer layer; second conductive vias arranged in a peripheral region of the intermediate buffer layer; a surface bonding layer formed above the intermediate buffer layer, the surface bonding layer spaced from and aligned with the intermediate buffer layer, the second conductive vias vertically connecting the intermediate buffer layer and the surface bonding layer, the intermediate buffer layer comprising a mesh structure, and the first conductive vias and the second conductive vias not vertically aligned with a central region of the intermediate buffer layer.

BONDING PAD STRUCTURE FOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
20200411457 · 2020-12-31 ·

A bonding pad structure and a method thereof includes: a base metal layer formed on a substrate; first conductive vias arranged in a peripheral region of the base metal layer; an intermediate buffer layer formed above the base metal layer, the intermediate buffer layer spaced from and aligned with the base metal layer, the first conductive vias vertically connecting the base metal layer and the intermediate buffer layer; second conductive vias arranged in a peripheral region of the intermediate buffer layer; a surface bonding layer formed above the intermediate buffer layer, the surface bonding layer spaced from and aligned with the intermediate buffer layer, the second conductive vias vertically connecting the intermediate buffer layer and the surface bonding layer, the intermediate buffer layer comprising a mesh structure, and the first conductive vias and the second conductive vias not vertically aligned with a central region of the intermediate buffer layer.

Electronic component, electronic apparatus, and method of manufacturing electronic apparatus

An electronic component includes a substrate configured to include a first portion that first thermal conductivity, and have a first surface and a second surface opposite to the first surface; a second portion configured to be formed inside the first portion, and have second thermal conductivity lower than the first thermal conductivity; a first terminal configured to be formed to correspond to the second portion on a side of the first surface; and a second terminal configured to be formed on a side of the second surface.

ELECTRONIC COMPONENT, ELECTRONIC APPARATUS, AND METHOD OF MANUFACTURING ELECTRONIC APPARATUS
20170098631 · 2017-04-06 · ·

An electronic component includes a substrate configured to include a first portion that first thermal conductivity, and have a first surface and a second surface opposite to the first surface;a second portion configured to be formed inside the first portion, and have second thermal conductivity lower than the first thermal conductivity;a first terminal configured to be formed to correspond to the second portion on a side of the first surface; and a second terminal configured to be formed on a side of the second surface.