A display device includes a substrate, a first light-emitting element, a second light-emitting element, and a third light-emitting element on the substrate, each of the first, second, and third light-emitting elements includes a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer, an opening formed in the second semiconductor layer and the third semiconductor layer of the third light-emitting element, and a wavelength conversion member located at the opening, wherein the first light-emitting element and the third light-emitting element are configured to emit first light, and the second light-emitting element is configured to emit second light, and the wavelength conversion member is configured to convert the first light from the third light-emitting element into third light.

A semiconductor package and a method of forming the same are provided. The semiconductor package includes: a semiconductor substrate having a front side and a back side, the semiconductor substrate having a chip area and a dummy area; a front structure below the front side, and including an internal circuit, an internal connection pattern, a guard pattern, and a front insulating structure; a rear protective layer overlapping the chip area and the dummy area, and a rear protrusion pattern on the rear protective layer and overlapping the dummy area, the rear protective layer and the rear protrusion pattern being on the back side; a through-electrode structure penetrating through the chip area and the rear protective layer, and electrically connected to the internal connection pattern; and a rear pad electrically connected to the through-electrode structure. The internal circuit and the internal connection pattern are below the chip area, and the guard pattern is below the chip area adjacent to the dummy area.

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

Provided are a display device and a tiled display device. The display device according to one or more embodiments includes a substrate, transistors above the substrate, a first organic insulating layer above the transistors, a first connection electrode above the first organic insulating layer, and electrically connected to at least one of the transistors, a second connection electrode above the first organic insulating layer, a first power supply line configured to receive a first power voltage, above the first organic insulating layer, and connected to the second connection electrode, and a second organic insulating layer above the first power supply line, and defining an opening area exposing the first power supply line.

A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.

A method of treatment of an electronic circuit including at a location at least one electrically-conductive test pad having a first exposed surface. The method includes the at least partial etching of the test pad from the first surface, and the forming on the electronic circuit of an interconnection level covering said location and including, on the side opposite to said location, a second planar surface adapted for the performing of a hybrid molecular bonding.

A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes an interconnect structure on a substrate; a passivation layer disposed on the interconnect structure; a first via, a second via and a third via disposed in the passivation layer and connected to the interconnect structure, each of the first, second and third vias has an elongated shape longitudinally oriented along a first direction; and a first pad longitudinally oriented along the first direction and landing on the first, second and third vias.

A display device is provided. The display device comprising: a substrate including a display area and a pad area, a first conductive layer disposed on the substrate and including a first signal line disposed in the display area, a buffer layer disposed on the first conductive layer, a semiconductor layer disposed on the buffer layer in the display area, a gate insulating film disposed on the semiconductor layer, a second conductive layer disposed on the gate insulating film and including a gate electrode overlapping the semiconductor layer in the display area, a first electrode of a transistor disposed to overlap one side of the semiconductor layer in the display area and connected to the first signal line through a contact hole penetrating through the buffer layer and the gate insulating film, and a second electrode of the transistor disposed to overlap the other side of the semiconductor layer in the display area, a first pad disposed on the buffer layer in the pad area and exposed by a pad opening, a first insulating layer disposed on the second conductive layer and the first pad, and a light emitting element disposed on the first insulating layer in the display area, wherein the first pad is formed of the first conductive layer or the second conductive layer.

A semiconductor packaging structure includes a die including a bond pad and a first metal layer structure disposed on the die, the first metal layer structure having a first width, the first metal layer structure including a first metal layer, the first metal layer electrically coupled to the bond pad. The semiconductor packaging structure also includes a first photosensitive material around sides of the first metal layer structure and a second metal layer structure disposed over the first metal layer structure and over a portion of the first photosensitive material, the second metal layer structure electrically coupled to the first metal layer structure, the second metal layer structure having a second width, where the second width is greater than the first width. Additionally, the semiconductor packaging structure includes a second photosensitive material around sides of the second metal layer structure.

A semiconductor package including a first stack; a plurality of TSVs passing through the first stack; a second stack on the first stack and including a second surface facing a first surface of the first stack; a first pad on the first stack and in contact with the TSVs; a second pad on the second stack; a bump connecting the first and second pads; a first redundancy pad on the first surface of the first stack, spaced apart from the first pad, and not in contact with the TSVs; a second redundancy pad on the second surface of the second stack and spaced apart from the second pad; and a redundancy bump connecting the first redundancy pad and the second redundancy pad, wherein the first pad and first redundancy pad are electrically connected to each other, and the second pad and second redundancy pad are electrically connected to each other.