Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first chip and a second chip. A first conductive connection wire of the first chip is connected to a first conductive contact pad, and a second conductive connection wire of the second chip is connected to a second conductive contact pad. In addition, the first conductive contact pad includes a first conductor group and a second conductor group, and the second conductive contact pad includes a third conductor group and a fourth conductor group.

A method for forming a hybrid-bonding structure is provided. The method includes forming a first dielectric layer over a first semiconductor substrate. The first semiconductor substrate includes a conductive structure. The method also includes partially removing the first dielectric layer to form a first dielectric dummy pattern, a second dielectric dummy pattern and a third dielectric dummy pattern and an opening through the first dielectric layer. The first dielectric dummy pattern, the second dielectric dummy pattern and the third dielectric dummy pattern are surrounded by the opening. In addition, the method includes forming a first conductive line in the opening. The first conductive line is in contact with the conductive structure.

A semiconductor package is provided. The semiconductor package includes a first structure with a first insulating layer and a connection pad which penetrates through the first insulating layer; and a second structure with a second insulating layer bonded to the first insulating layer and a pad structure provided in a recess portion of the second insulating layer. The pad structure is bonded to and wider than the connection pad. The pad structure includes: an electrode pad disposed on a bottom surface of the recess portion; a solder disposed on the electrode pad and bonded to the connection pad; and a conductive support disposed to surround a side surface of the solder on the electrode pad and bonded to the first insulating layer. A melting point of the conductive support is higher than a melting point of the solder.

In one embodiment, a semiconductor device includes a substrate, a lower pad provided above the substrate, and an upper pad provided on the lower pad. The lower pad includes a first pad and a plurality of first connection portions provided on the first pad, and the upper pad is provided on the plurality of first connection portions, or the upper pad includes a second pad and a plurality of second connection portions provided under the second pad, and the lower pad is provided under the plurality of second connection portions.

A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

An integrated circuit package module includes an integrated circuit package device including a contact element, and a bonding system formed on the integrated circuit package device. The bonding system includes a bonding system substrate and a bonding element formed in the bonding system substrate and conductively coupled to the contact element of the integrated circuit package device. The bonding element includes (a) a conduction component conductively connected to the contact element, the conduction component formed from a first metal having a first melting point, and (b) a bonding component formed from a second metal having a second melting point lower than the first melting point of the first metal.

A bonding device measures a position deviation amount of the chip with respect to the substrate in a state where the chip and the substrate are in contact, and corrects and moves the chip relatively to the substrate in such a way as to reduce the position deviation amount, based on the measured position deviation amount. Then, the bonding device fixes the chip to the substrate by irradiating a resin portion of the chip with an ultraviolet ray and curing the resin portion when the position deviation amount of the chip with respect to the substrate is equal to or less than a position deviation amount threshold value.

A semiconductor package includes a first semiconductor chip having a first substrate, a first insulating layer on the first substrate, and a plurality of first bonding pads on the first insulating layer, and having a flat upper surface by an upper surface of the first insulating layer and upper surfaces of the plurality of first bonding pads; and a second semiconductor chip on the upper surface of the first semiconductor chip and having a second substrate, a second insulating layer below the second substrate and in contact with the first insulating layer, and a plurality of second bonding pads on the second insulating layer and in contact with the first bonding pads, respectively, wherein the first insulating layer includes an insulating interfacial layer in contact with the second insulating layer, embedded in the first insulating layer, and spaced apart from the plurality of first bonding pads.

Semiconductor apparatus and method for manufacturing semiconductor apparatus are provided. Semiconductor apparatus includes a semiconductor substrate having metal pads, a first passivation layer, a second passivation layer, an under bump metal layer, a stress buffer layer, a copper pillar and a solder structure. First passivation layer is formed on the semiconductor substrate and covers a portion of each metal pad, the first passivation layer has first passivation layer openings to expose a first portion of each metal pad. Second passivation layer is formed on the first passivation layer, the second passivation layer has second passivation layer openings to expose a second portion of each metal pad. Under bump metal layer is formed on the second portion of each metal pad exposed by the second passivation layer opening. Stress buffer layer is formed on the under bump metal layer, and the copper pillar is disposed on the stress buffer layer.