Bond pads for semiconductor die assemblies, and associated methods and systems are disclosed. In one embodiment, a semiconductor die assembly includes a first semiconductor die including a first bond pad on a first side of the first semiconductor die. The semiconductor die assembly further includes a second semiconductor die including a second bond pad on a second side of the second semiconductor die. The first bond pad is aligned and bonded to the second bond pad at a bonding interface between the first and second bond pads, and at least one of the first and second bond pads include a first metal and a second metal different than the first metal. Further, the first metal is located at the bonding interface and the second metal has a first thickness corresponding to at least one-fourth of a second thickness of the first or second bond pad.

A display device includes a display panel including panel pads adjacent to the side surface of a display panel; connection pads disposed on the side surface of the display panel and connected to the panel pads; and a circuit board disposed on the side surface of the display panel and including lead signal lines directly bonded to the connection pads, wherein the connection pads include a first connection pad, a second connection pad disposed on the first connection pad, and a third connection pad disposed on the second connection pad, and the first connection pad is in contact with corresponding one of the panel pads, and the third connection pad is directly bonded to corresponding one of the lead signal lines.

A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm. A method for manufacturing a semiconductor device according to the present invention includes: a step of forming a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, on the surface of a first conductive-type SiC semiconductor layer; and a step for heat treating the Schottky metal whilst the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5 nm.

A method is provided. The method includes one or more of extracting a die from an original packaged integrated circuit, modifying the extracted die, reconditioning the modified extracted die, placing the reconditioned die into a cavity of a hermetic package base, bonding a plurality of bond wires between reconditioned die pads of the reconditioned die to leads of the hermetic package base or downbonds to create an assembled hermetic package base, and sealing a hermetic package lid to the assembled hermetic package base to create a new packaged integrated circuit. Modifying the extracted die includes removing the one or more ball bonds on the one or more die pads. Reconditioning the modified extracted die includes adding a sequence of metallic layers to bare die pads of the modified extracted die. The extracted die is a fully functional semiconductor die with one or more ball bonds on one or more die pads of the extracted die.

The present disclosure provides a chip part. The chip part includes: a capacitor portion, including a plurality of wall portions separated from each other by a plurality of trenches formed on the first main surface and having a lengthwise direction; a substrate body, formed around the capacitor portion using a portion of the semiconductor substrate; a lower electrode, disposed using at least a portion of the semiconductor substrate including the wall portions; a capacitive film, disposed along top and side surfaces of the plurality of wall portions; and an upper electrode, disposed on the capacitive film.

A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.

A manufacturing method fora micro light-emitting diode (LED) display panel includes: providing a base substrate carrying a plurality of LED dies, each LED die including a first semiconductor layer, a light-emitting material layer, a second semiconductor layer and a first conductive layer, the first semiconductor layer being bonded with the base substrate through a sacrificial layer, a material of the sacrificial layer being decomposable under laser irradiation; providing a backplane having a plurality of bonding structures; bonding at least some LED dies of the plurality of LED dies to at least some of the plurality of bonding structures through respective first conductive layers; and peeling each of the at least some LED dies from the base substrate through laser lift-off.

A method of making an assembly can include juxtaposing a top surface of a first electrically conductive element at a first surface of a first substrate with a top surface of a second electrically conductive element at a major surface of a second substrate. One of: the top surface of the first conductive element can be recessed below the first surface, or the top surface of the second conductive element can be recessed below the major surface. Electrically conductive nanoparticles can be disposed between the top surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers. The method can also include elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles can cause metallurgical joints to form between the juxtaposed first and second conductive elements.

A power semiconductor chip having: a semiconductor component body; a multilayer metallization arranged on the semiconductor component body; and a nickel layer arranged over the semiconductor component body. The invention further relates to a method for producing a power semiconductor chip and to a power semiconductor device. The invention provides a power semiconductor chip which has a metallization to which a copper wire, provided without a thick metallic coating, can be reliably bonded without damage to the power semiconductor chip during bonding.

A method for fabricating a semiconductor product includes forming a dielectric layer over a top level metallization layer of a semiconductor process wafer. The dielectric layer is patterned using a grayscale mask process to define a contact pad opening in the dielectric layer, thereby producing a patterned dielectric layer in which the contact pad opening is aligned to a contact pad defined in the top level metallization layer. A metal layer is deposited over the patterned dielectric layer, including within the contact pad opening. A portion of the metal layer is removed by a chemical mechanical polishing (CMP) process, with a remaining portion of the metal layer having a sloped sidewall.