A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

Embodiments of the present disclosure propose a semiconductor packaging method and a semiconductor structure. The semiconductor packaging method includes: providing a substrate; forming a metal pad on the substrate, where there is a gap between a sidewall of the metal pad and the substrate; and connecting multiple metal pads on substrates to each other.

Embodiments of the present disclosure propose a semiconductor packaging method and a semiconductor structure. The semiconductor packaging method includes: providing a substrate; forming a metal pad on the substrate, where there is a gap between a sidewall of the metal pad and the substrate; and connecting multiple metal pads on substrates to each other.

A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

Solder-pinning metal pads for electronic components and techniques for use thereof to mitigate de-wetting are provided. In one aspect, a structure includes: a substrate; and a solder pad on the substrate, wherein the solder pad has sidewalls extending up from a surface thereof. For instance, the sidewalls can be present at edges of the solder pad, or inset from the edges of the solder pad. The sidewalls can be vertical or extend up from the solder pad at an angle. The sidewalls can be formed from the same material or a different material as the solder pad. A method is also provided that includes forming a solder pad on a substrate, the solder pad comprising sidewalls extending up from a surface thereof.

Solder-pinning metal pads for electronic components and techniques for use thereof to mitigate de-wetting are provided. In one aspect, a structure includes: a substrate; and a solder pad on the substrate, wherein the solder pad has sidewalls extending up from a surface thereof. For instance, the sidewalls can be present at edges of the solder pad, or inset from the edges of the solder pad. The sidewalls can be vertical or extend up from the solder pad at an angle. The sidewalls can be formed from the same material or a different material as the solder pad. A method is also provided that includes forming a solder pad on a substrate, the solder pad comprising sidewalls extending up from a surface thereof.