H01L2224/05791

TERMINAL AND CONNECTION METHOD

An object of the present technology is to prevent damage in a bonded portion between a semiconductor chip and a substrate in a semiconductor device in which the semiconductor chip is mounted on the substrate.

A terminal is disposed between an electrode of an element and an electrode of a substrate on which the element is mounted, and electrically connects the electrode of the element and the electrode of the substrate. The terminal includes a plurality of unit lattices and a coupling portion. The unit lattices included in the terminal are formed by bonding a plurality of beams in a cube shape. The coupling portion included in the terminal couples adjacent unit lattices among the plurality of unit lattices.

Adhesive bonding composition and method of use

A method of and system for adhesive bonding by a) providing a polymerizable adhesive composition on a surface of an element to be bonded to form an assembly; b) irradiating the assembly with radiation at a first wavelength capable of vulcanization of bonds in the polymerizable adhesive composition by activation of sulfur-containing compound with at least one selected from x-ray, e-beam, visible, or infrared light to thereby generate ultraviolet light in the polymerizable adhesive composition; and c) adhesively joining two or more components together by way of the polymerizable adhesive composition, and a curable polymer for use therein.

ADHESIVE BONDING COMPOSITION AND METHOD OF USE

A method of and system for adhesive bonding by a) providing a polymerizable adhesive composition on a surface of an element to be bonded to form an assembly; b) irradiating the assembly with radiation at a first wavelength capable of vulcanization of bonds in the polymerizable adhesive composition by activation of sulfur-containing compound with at least one selected from x-ray, e-beam, visible, or infrared light to thereby generate ultraviolet light in the polymerizable adhesive composition; and c) adhesively joining two or more components together by way of the polymerizable adhesive composition, and a curable polymer for use therein.

Semiconductor device with thermal release layer and method for fabricating the same
11495516 · 2022-11-08 · ·

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first pad positioned above the substrate, and a first redistribution structure including a first redistribution conductive layer positioned on the first pad and a first redistribution thermal release layer positioned on the first redistribution conductive layer. The first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm.sup.2/Watt and about 0.25° C. cm.sup.2/Watt.

Semiconductor device with thermal release layer and method for fabricating the same
11495516 · 2022-11-08 · ·

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first pad positioned above the substrate, and a first redistribution structure including a first redistribution conductive layer positioned on the first pad and a first redistribution thermal release layer positioned on the first redistribution conductive layer. The first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm.sup.2/Watt and about 0.25° C. cm.sup.2/Watt.

SEMICONDUCTOR DEVICE WITH THERMAL RELEASE LAYER AND METHOD FOR FABRICATING THE SAME
20220165639 · 2022-05-26 ·

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first pad positioned above the substrate, and a first redistribution structure including a first redistribution conductive layer positioned on the first pad and a first redistribution thermal release layer positioned on the first redistribution conductive layer. The first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm.sup.2/Watt and about 0.25° C. cm.sup.2/Watt.

SEMICONDUCTOR DEVICE WITH THERMAL RELEASE LAYER AND METHOD FOR FABRICATING THE SAME
20220165639 · 2022-05-26 ·

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first pad positioned above the substrate, and a first redistribution structure including a first redistribution conductive layer positioned on the first pad and a first redistribution thermal release layer positioned on the first redistribution conductive layer. The first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm.sup.2/Watt and about 0.25° C. cm.sup.2/Watt.

SEMICONDUCTOR DEVICE WITH THERMAL RELEASE LAYER AND METHOD FOR FABRICATING THE SAME
20220189847 · 2022-06-16 ·

The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first pad above the substrate, forming a first redistribution conductive layer on the first pad, and forming a first redistribution thermal release layer on the first redistribution conductive layer. The first redistribution conductive layer and the first redistribution thermal release layer together form a first redistribution structure and the first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm.sup.2/Watt and about 0.25° C. cm.sup.2/Watt.

SEMICONDUCTOR DEVICE WITH THERMAL RELEASE LAYER AND METHOD FOR FABRICATING THE SAME
20220189847 · 2022-06-16 ·

The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first pad above the substrate, forming a first redistribution conductive layer on the first pad, and forming a first redistribution thermal release layer on the first redistribution conductive layer. The first redistribution conductive layer and the first redistribution thermal release layer together form a first redistribution structure and the first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm.sup.2/Watt and about 0.25° C. cm.sup.2/Watt.

ADHESIVE BONDING COMPOSITION AND METHOD OF USE

A method of and system for adhesive bonding by a) providing a polymerizable adhesive composition on a surface of an element to be bonded to form an assembly; b) irradiating the assembly with radiation at a first wavelength capable of vulcanization of bonds in the polymerizable adhesive composition by activation of sulfur-containing compound with at least one selected from x-ray, e-beam, visible, or infrared light to thereby generate ultraviolet light in the polymerizable adhesive composition; and c) adhesively joining two or more components together by way of the polymerizable adhesive composition, and a curable polymer for use therein.