In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

A method for bonding semiconductor dies, resulting semiconductor devices, and associated systems and methods are disclosed. In some embodiments, the method includes depositing a first material on the first semiconductor die. The first material has a first outer surface and a first chemical composition at the first outer surface. The method also includes depositing a second material on the second semiconductor die. The second material has a second outer surface and a second chemical composition at the second outer surface that is different from the first chemical composition. The method also includes stacking the dies. The second outer surface of the second semiconductor die is in contact with the first outer surface of the first semiconductor die in the stack. The method also includes reacting the first outer surface with the second outer surface. The reaction causes the first outer surface to bond to the second outer surface.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

In a general aspect, a method can include forming a first conductive metal layer including a common gate conductor, and coupling a plurality of semiconductor die to the common gate conductor of the first conductive metal layer where the plurality of semiconductor die include a first silicon carbide die and a second silicon carbide die. The method can include encapsulating at least a portion of the first conductive metal layer and the semiconductor die within an insulator where the first conductive metal layer includes a first conductive path between the common gate conductor and a die gate conductor of the first silicon carbide die, and a second conductive path between the common gate conductor and a die gate conductor of the second silicon carbide die. The first conductive path can have a length substantially equal to a length of the second conductive path.

In a general aspect, a method can include forming a first conductive metal layer including a common gate conductor, and coupling a plurality of semiconductor die to the common gate conductor of the first conductive metal layer where the plurality of semiconductor die include a first silicon carbide die and a second silicon carbide die. The method can include encapsulating at least a portion of the first conductive metal layer and the semiconductor die within an insulator where the first conductive metal layer includes a first conductive path between the common gate conductor and a die gate conductor of the first silicon carbide die, and a second conductive path between the common gate conductor and a die gate conductor of the second silicon carbide die. The first conductive path can have a length substantially equal to a length of the second conductive path.

Semiconductor dies and devices, such as memory dies and devices, and associated systems and methods, are disclosed herein. A representative semiconductor die comprises a substrate including a first surface, a second surface opposite the first surface, a perimeter, and a recess formed into the first surface adjacent to the perimeter. The recess has a depth in a direction extending between the first surface and the second surface. The semiconductor die further comprises a first bonding structure on the first surface and a second bonding structure on the second surface. The first bonding structure has a thickness, and the depth is at least ten times greater than the thickness. The recess can facilitate mechanical debonding of the semiconductor die during a manufacturing process that includes stacking the semiconductor die within a semiconductor device package.