A method for manufacturing electronic chips includes forming, on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed beforehand, metallizations coupling contacts of adjacent integrated circuits to one another. The method further includes forming, on the side of the first face of the substrate, first trenches extending through the first face of the substrate and laterally separating the adjacent integrated circuits. The first trenches extend through the metallizations to form at least a portion of metallizations at each of the adjacent circuits.

A method of forming a semiconductor structure is provided. A layout of a substrate is provided. The layout includes a surface having an inner region and an outer region surrounding the inner region. An under bump metallurgy (UBM) pad region within the outer region is defined. The UBM pad region is partitioned into a first zone and a second zone, wherein the first zone faces towards a center of the substrate, and the second zone faces away from the center of the substrate. The substrate is provided according to the layout, wherein the providing of the substrate includes forming a conductive via in the substrate. The conductive via is disposed outside the second zone and at least partially overlaps the first zone from a top view perspective. A UBM pad is formed over the conductive via and within the UBM pad region.

A semiconductor package includes a base substrate; a redistribution substrate disposed on the base substrate, and that includes first insulating layers and redistribution pattern layers disposed on the first insulating layers, respectively; a semiconductor chip disposed on the redistribution substrate and electrically connected to the redistribution pattern layers; and a chip structure disposed on the redistribution substrate adjacent to the semiconductor chip and electrically connected to the semiconductor chip through the redistribution pattern layers, wherein the semiconductor chip includes a body that has an active surface that faces the redistribution substrate; first and second contact pads spaced apart from each other below the active surface; a first bump structure and a passive device electrically connected to the first connection pad at a lower level from the first connection pad; and a second bump structure electrically connected to the second connection pad at a lower level from the second connection pad.

Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

A semiconductor die (“die”) employing repurposed seed layer for forming additional signal paths to a back end-of-line (BEOL) structure of the die, and related integrated circuit (IC) packages and fabrication methods. A seed layer is repurposed that was disposed adjacent the BEOL interconnect structure to couple an under bump metallization (UBM) interconnect without a coupled interconnect bump thus forming an unraised interconnect bump, to a UBM interconnect that has a raised interconnect bump. To couple the unraised interconnect bump to the raised interconnect bump, the seed layer is selectively removed during fabrication to leave a portion of the seed layer repurposed that couples the UBM interconnect that does not have an interconnect bump to the UBM interconnect that has a raised interconnect bump. Additional routing paths can be provided between raised interconnect bumps to the BEOL interconnect structure through coupling of UBM interconnects to an unraised interconnect bump.

A semiconductor die (“die”) employing repurposed seed layer for forming additional signal paths to a back end-of-line (BEOL) structure of the die, and related integrated circuit (IC) packages and fabrication methods. A seed layer is repurposed that was disposed adjacent the BEOL interconnect structure to couple an under bump metallization (UBM) interconnect without a coupled interconnect bump thus forming an unraised interconnect bump, to a UBM interconnect that has a raised interconnect bump. To couple the unraised interconnect bump to the raised interconnect bump, the seed layer is selectively removed during fabrication to leave a portion of the seed layer repurposed that couples the UBM interconnect that does not have an interconnect bump to the UBM interconnect that has a raised interconnect bump. Additional routing paths can be provided between raised interconnect bumps to the BEOL interconnect structure through coupling of UBM interconnects to an unraised interconnect bump.

A structure and a formation method of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and an interconnection structure over the semiconductor substrate. The semiconductor device structure also includes a first conductive pillar over the interconnection structure. The first conductive pillar has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive pillar. The semiconductor device structure further includes a second conductive pillar over the interconnection structure. The second conductive pillar has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive pillar. The first conductive pillar is closer to a center point of the semiconductor substrate than the second conductive pillar. A bottom of the second protruding portion is wider than a bottom of the first protruding portion.