A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.

A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.

A semiconductor device includes a plurality of semiconductor switching elements disposed on a single semiconductor substrate comprising a semiconductor having a bandgap that is wider than that of silicon; and a plurality of electrode pads that are disposed in a predetermined planar layout on a front surface of the semiconductor substrate, the plurality of electrode pads each being electrically connected to the plurality of semiconductor switching elements. A plurality of terminal pins to externally carry out voltage of the electrode pads is bonded through a plated film to all of the plurality of electrode pads by solder.

A first connection part includes a first metal part electrically connected with a wiring layer, and a second metal part located on a second surface of a second substrate. The second metal part faces the first metal part in a first direction. A second connection part includes a third metal part electrically connected with the wiring layer, and a fourth metal part located on the second surface of the second substrate. The fourth metal part faces the third metal part in the first direction. One of the first connection part or the second connection part has a metal part-metal part bond structure. The other of the first connection part or the second connection part is capacitively coupled via a gap.