A bonded assembly includes a first semiconductor die and a second semiconductor die that are bonded to each other by dielectric-to-dielectric bonding. First conductive via structures vertically extend through the second semiconductor die and a respective subset of the first dielectric material layers in the first semiconductor die, and contact a respective first metal interconnect structure in the first semiconductor die. Second conductive via structures vertically extend through a second substrate and a respective subset of the second dielectric material layers in the second semiconductor die, and contacting a respective second metal interconnect structure in the second semiconductor die. Redistribution metal interconnect structures located over a backside surface of the second substrate electrically connect the first conductive via structures and the second conductive via structures, and provide electrical interconnection between the first semiconductor die and the second semiconductor die.

A method of manufacturing a semiconductor package includes forming an insulating layer; forming a seed layer on the insulating layer; forming a photoresist layer on the seed layer; forming a plurality of line pattern holes by patterning the photoresist layer, a horizontal length of a middle portion of each of the plurality of line pattern holes being less than a horizontal length of an upper portion of each of the plurality of line pattern holes and a horizontal length of a lower portion of each of the plurality of line pattern holes; and forming a redistribution line pattern by performing a plating process using a portion of the seed layer exposed by the plurality of line pattern holes.

A semiconductor package includes a chip level unit including a semiconductor chip; a medium level unit; and a solder ball unit. The solder ball unit is to be connected to a circuit substrate. The medium level unit includes: a wiring pad layer on a first protection layer; a second protection layer including a pad-exposing hole on the first protection layer, a post layer in the pad-exposing hole on the wiring pad layer; and a third protection layer including a post-exposing hole on the second protection layer. A width or diameter of the post-exposing hole is smaller than a width or diameter of the pad-exposing hole; and a barrier layer is disposed in the post-exposing hole on the post layer. The solder ball unit includes a solder ball on the barrier layer.

A semiconductor package includes: a first redistribution layer; a first semiconductor chip including a first side and a second side, wherein the first side faces the first redistribution layer; a first sealing material covering the second side of the first semiconductor chip and having a first filler content; a second sealing material formed on the first sealing material and having a second filler content lower than the first filler content; and a second redistribution layer disposed on the second sealing material.

An electronic package is provided in the present disclosure. The electronic package comprises: a heat spreading component; a first electronic component disposed on the heat spreading component; and a second electronic component disposed on the first electronic component, wherein the second electronic component comprises an interconnection structure passing through the second electronic component and electrically connecting the first electronic component. In this way, through the use of the interconnection structure, the heat dissipation of the electronic components in the package can be improved. Also, through the use of the encapsulant, the stacked electronic components can be protected by the encapsulant so as to avoid being damaged.

A method includes forming a seed layer over a first conductive feature of a wafer, forming a patterned plating mask on the seed layer, and plating a second conductive feature in an opening in the patterned plating mask. The plating includes performing a plurality of plating cycles, with each of the plurality of plating cycles including a first plating process performed using a first plating current density, and a second plating process performed using a second plating current density lower than the first plating current density. The patterned plating mask is then removed, and the seed layer is etched.

Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a cavity in a plating material to hold a die, attaching the die in the cavity, forming a dielectric material adjacent the die, forming vias in the dielectric material adjacent the die, forming PoP lands in the vias, forming interconnects in the vias, and then removing the plating material to expose the PoP lands and die, wherein the die is disposed above the PoP lands.

A method of forming an implantable electrode array that includes one or more packaged control modules. A control module is packaged by mounting the module to a substrate and forming a containment ring around the module. A conformal coating is disposed over the surface of the module to cover the carrier. Within the containment ring, the conformal coating hardens to form a non-porous shell around the control module. The one or more packaged control modules are placed in a flexible array. Electrodes that are mounted to or embedded in the flexible carrier are connected to the one or more control modules.

A package structure and a method for manufacturing the same are provided. The package structure includes an electronic device, a heat spreader, an intermediate layer and an encapsulant. The electronic device includes a plurality of electrical contacts. The intermediate layer is interposed between the electronic device and the heat spreader. The intermediate layer includes a sintered material. The encapsulant encapsulates the electronic device. A surface of the encapsulant is substantially coplanar with a plurality of surfaces of the electrical contacts.

In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.