A method of fabricating an integrated fan-out package is provided. The method includes the following steps. An integrated circuit component is provided on a substrate. An insulating encapsulation is formed on the substrate to encapsulate sidewalls of the integrated circuit component. A redistribution circuit structure is formed along a build-up direction on the integrated circuit component and the insulating encapsulation. The formation of the redistribution circuit structure includes the following steps. A dielectric layer and a plurality of conductive vias embedded in the dielectric layer are formed, wherein a lateral dimension of each of the conductive vias decreases along the build-up direction. A plurality of conductive wirings is formed on the plurality of conductive vias and the dielectric layer. An integrated fan-out package of the same is also provided.

A semiconductor package including a core substrate, a semiconductor chip in the core substrate and having chip pads, a redistribution wiring layer covering a lower surface of the core substrate and including redistribution wirings electrically connected to the chip pads and a pair of capacitor pads exposed from an outer surface of the redistribution wiring layer, conductive pastes on the capacitor pads, respectively, and a capacitor via the conductive pastes and having first and second outer electrodes on the capacitor pads, respectively, may be provided. Each of the capacitor pads includes a pad pattern exposed from the outer surface of the redistribution wiring layer, and at least one via pattern at a lower portion of the pad pattern and electrically connected to at least one of the redistribution wirings. The via pattern is eccentric by a distance from a center line of the pad pattern.

A semiconductor package includes an insulating layer including a first face and a second face opposite each other, a redistribution pattern including a wiring region and a via region in the insulating layer, the wiring region being on the via region, and a first semiconductor chip connected to the redistribution pattern. The first semiconductor chip may be on the redistribution pattern. An upper face of the wiring region may be coplanar with the first face of the insulating layer.

A semiconductor package includes a semiconductor die, a first thermal conductive pattern and a second thermal conductive pattern. The semiconductor die is encapsulated by an encapsulant. The first thermal conductive pattern is disposed aside the semiconductor die in the encapsulant. The second thermal conductive pattern is disposed over the semiconductor die, wherein the first thermal conductive pattern is thermally coupled to the semiconductor die through the second thermal conductive pattern and electrically insulated from the semiconductor die.

A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.

A semiconductor package structure includes a chip, a conductive pillar, a dielectric layer, a first patterned conductive layer and a second patterned conductive layer. The chip has a first side with at least a first metal electrode pad and a second side with at least a second metal electrode pad. The conductive pillar, which has a first end and a second end, is disposed adjacent to the chip. The axis direction of the conductive pillar is parallel to the height direction of the chip. The dielectric layer covers the chip and the conductive pillar and exposes the first and second metal electrode pads of the chip and the first and second ends of the conductive pillar. The first patterned conductive layer is disposed on a second surface of the dielectric layer and electrically connected between the second metal electrode pad and the second end of the conductive pillar. The second patterned conductive layer is disposed on a first surface of the dielectric layer and electrically connected between the first metal electrode pad and the first end of the conductive pillar.

The present disclosure relates to an embedded packaging module comprising a first semiconductor device, a first packaging layer and a first wiring layer, the first semiconductor device having a first and a second face, at least two positioning bulges and at least one bonding pad being provided on the first face of the first semiconductor device; the first packaging layer being formed on both the first face and a surface adjacent to the first face, the positioning bulges being positioned in the first packaging layer, at least one first via hole being provided in the first packaging layer, the bottom of the first via hole being positioned in the bonding pad and contacting with the bonding pad; the first wiring layer being positioned on the side of the first packaging layer away from the first semiconductor device and being electrically connected with the bonding pad through the first via hole.

A composite integrated circuit (IC) device structure comprising a host chip and a chiplet. The host chip comprises a first device layer and a first metallization layer. The chiplet comprises a second device layer and a second metallization layer that is interconnected to transistors of the second device layer. A top metallization layer comprising a plurality of first level interconnect (FLI) interfaces is over the chiplet and host chip. The chiplet is embedded between a first region of the first device layer and the top metallization layer. The first region of the first device layer is interconnected to the top metallization layer by one or more conductive vias extending through the second device layer or adjacent to an edge sidewall of the chiplet.

An integrated radar circuit comprising: a first substrate, of a first semiconductor material, said first substrate comprising an integrated transmit and receive radar circuit; a second substrate, of a second semiconductor material, said second substrate comprising at least on through-substrate cavity having cavity walls; at least one discrete transistor chip, of a third semiconductor material, said at least one discrete transistor chip having chip walls and being held in said at least one through-substrate cavity by a metal filling extending from at least one cavity wall to at least one chip wall; a conductor on said second substrate, electrically connecting a portion of said integrated transmit and receive radar circuit to a discrete transistor on said at least one discrete transistor chip.

A semiconductor package includes a semiconductor substrate forming a cavity and a redistribution layer on a first side of the semiconductor substrate, the redistribution layer forming die contacts within the cavity and a set of terminals for the semiconductor package opposite the semiconductor substrate. The redistribution layer electrically connects one or more of the die contacts to the set of terminals. The semiconductor package further includes a semiconductor die including die terminals within the cavity with the die terminals electrically coupled to the die contacts within the cavity.